Melting curve of silicon to 15 GPa determined by two-dimensional angle-dispersive diffraction using a Kawai-type apparatus with X-ray transparent sintered diamond anvils

Atsushi Kubo, Yanbin Wang, Claire E. Runge, Takeyuki Uchida, Boris Kiefer, Norimasa Nishiyama, Thomas S. Duffy

Research output: Contribution to journalArticle

32 Scopus citations

Abstract

The melting curve of silicon has been determined up to 15 GPa using a miniaturized Kawai-type apparatus with second-stage cubic anvils made of X-ray transparent sintered diamond. Our results are in good agreement with the melting curve determined by electrical resistivity measurements [V.V. Brazhkin, A.G. Lyapin, S.V. Popova, R.N. Voloshin, Nonequilibrium phase transitions and amorphization in Si, Si/GaAs, Ge, and Ge/GaSb at the decompression of high-pressure phases, Phys. Rev. B 51 (1995) 7549] up to the phase I (diamond structure)-phase II (β-tin structure)-liquid triple point. The triple point of phase XI (orthorhombic, Imma)-phase V (simple hexagonal)-liquid has been constrained to be at 14.4(4) GPa and 1010(5) K. These results demonstrate that the combination of X-ray transparent anvils and monochromatic diffraction with area detectors offers a reliable technique to detect melting at high pressures in the multianvil press.

Original languageEnglish (US)
Pages (from-to)2255-2260
Number of pages6
JournalJournal of Physics and Chemistry of Solids
Volume69
Issue number9
DOIs
StatePublished - Sep 2008

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

Keywords

  • C. High pressure
  • C. X-ray diffraction
  • D. Phase equilibria
  • D. Phase transitions

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