TY - JOUR
T1 - Melting curve of silicon to 15 GPa determined by two-dimensional angle-dispersive diffraction using a Kawai-type apparatus with X-ray transparent sintered diamond anvils
AU - Kubo, Atsushi
AU - Wang, Yanbin
AU - Runge, Claire E.
AU - Uchida, Takeyuki
AU - Kiefer, Boris
AU - Nishiyama, Norimasa
AU - Duffy, Thomas S.
N1 - Funding Information:
We thank John Vermylen, Sutatcha Hongsresawat, and GSECARS personnel for their assistance. Comments by an anonymous reviewer greatly improved the manuscript. This work was supported by the NSF and Carnegie–DOE alliance center. GSECARS is supported by the National Science Foundation-Earth Sciences (EAR-0217473), Department of Energy-Geosciences (DE-FG02-94ER14466), and the State of Illinois. Use of the APS was supported by the US Department of Energy, Office of Science, Office of Basic Energy Sciences, under Contract no. W-31-109-ENG-38. N.N. was partly supported by Postdoctoral Fellowships for Research Abroad of Japan Society for the Promotion of Science.
PY - 2008/9
Y1 - 2008/9
N2 - The melting curve of silicon has been determined up to 15 GPa using a miniaturized Kawai-type apparatus with second-stage cubic anvils made of X-ray transparent sintered diamond. Our results are in good agreement with the melting curve determined by electrical resistivity measurements [V.V. Brazhkin, A.G. Lyapin, S.V. Popova, R.N. Voloshin, Nonequilibrium phase transitions and amorphization in Si, Si/GaAs, Ge, and Ge/GaSb at the decompression of high-pressure phases, Phys. Rev. B 51 (1995) 7549] up to the phase I (diamond structure)-phase II (β-tin structure)-liquid triple point. The triple point of phase XI (orthorhombic, Imma)-phase V (simple hexagonal)-liquid has been constrained to be at 14.4(4) GPa and 1010(5) K. These results demonstrate that the combination of X-ray transparent anvils and monochromatic diffraction with area detectors offers a reliable technique to detect melting at high pressures in the multianvil press.
AB - The melting curve of silicon has been determined up to 15 GPa using a miniaturized Kawai-type apparatus with second-stage cubic anvils made of X-ray transparent sintered diamond. Our results are in good agreement with the melting curve determined by electrical resistivity measurements [V.V. Brazhkin, A.G. Lyapin, S.V. Popova, R.N. Voloshin, Nonequilibrium phase transitions and amorphization in Si, Si/GaAs, Ge, and Ge/GaSb at the decompression of high-pressure phases, Phys. Rev. B 51 (1995) 7549] up to the phase I (diamond structure)-phase II (β-tin structure)-liquid triple point. The triple point of phase XI (orthorhombic, Imma)-phase V (simple hexagonal)-liquid has been constrained to be at 14.4(4) GPa and 1010(5) K. These results demonstrate that the combination of X-ray transparent anvils and monochromatic diffraction with area detectors offers a reliable technique to detect melting at high pressures in the multianvil press.
KW - C. High pressure
KW - C. X-ray diffraction
KW - D. Phase equilibria
KW - D. Phase transitions
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U2 - 10.1016/j.jpcs.2008.04.025
DO - 10.1016/j.jpcs.2008.04.025
M3 - Article
AN - SCOPUS:50949132861
SN - 0022-3697
VL - 69
SP - 2255
EP - 2260
JO - Journal of Physics and Chemistry of Solids
JF - Journal of Physics and Chemistry of Solids
IS - 9
ER -