Mechanism of silicon etching in the presence of CF 2, F, and Ar +

David Humbird, David B. Graves

Research output: Contribution to journalArticlepeer-review

27 Scopus citations


Atomic scale mechanism of silicon etching in presence of CF 2, fluorine (F), and Ar + was analyzed using molecular dynamics simulation. It was found that segregated layers of Si-C and SiF x formed on silicon surfaces due to Ar + ion impact and ion-induced mixing. It was also found that carbon reaction with silicon in the SiC area increased the total atomic density in the Si-C layer top early three times the value observed in undistributed Si. The results show that the carbon slows down the etching rate on increasing the atomic density in Si-C layer.

Original languageEnglish (US)
Pages (from-to)2466-2471
Number of pages6
JournalJournal of Applied Physics
Issue number5
StatePublished - Sep 1 2004
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy


Dive into the research topics of 'Mechanism of silicon etching in the presence of CF 2, F, and Ar +'. Together they form a unique fingerprint.

Cite this