We report low-temperature tunneling measurements through double and triple quantum dots with adjustable interdot tunnel conductance, fabricated in a GaAs/(Formula presented)(Formula presented)As heterostructure. As interdot tunnel conductance is increased, Coulomb blockade conductance peaks split into two peaks for double dots and three for triple dots. The splitting approaches zero for weak tunneling and saturates as the dots merge for strong tunneling. Coupled double and triple dots with different gate capacitance show quasiperiodic beating and peak suppression for weak interdot tunneling. Analysis of the data in terms of tunneling and classical charging theories shows that quantum charge fluctuations due to interdot tunneling dominate dot interactions when interdot tunnel conductance approaches 2(Formula presented)/h.
|Original language||English (US)|
|Number of pages||8|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|State||Published - 1996|
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics