Abstract
Low-frequency-gain fluctuations of a 30-GHz cryogenic HEMT amplifier have been measured with the input of the amplifier connected to a 15-K load. Effects of fluctuations of other components of the test set-up were eliminated by use of a power-power correlation technique. Strong correlation between output power fluctuations of the amplifier and drain current fluctuations of the transistors comprising the amplifier are observed. The existence of these correlations introduces the possibility of regressing some of the excess noise from the HEMT amplifier's output using the measured drain currents.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 193-197 |
| Number of pages | 5 |
| Journal | IEEE Transactions on Microwave Theory and Techniques |
| Volume | 44 |
| Issue number | 2 |
| DOIs | |
| State | Published - 1996 |
All Science Journal Classification (ASJC) codes
- Radiation
- Condensed Matter Physics
- Electrical and Electronic Engineering