Abstract
We determine the density-dependent electron mass m* in two-dimensional electron systems of GaAs/AlGaAs heterostructures by performing detailed low-temperature Shubnikov-de Haas measurements. Using very high-quality transistors with tunable electron densities we measure m* in single, high mobility specimens over a wide range of rs (6 to 0.8). Toward low densities we observe a rapid increase of m* by as much as 40%. For 2 > rs > 0.8 the mass values fall ∼10% below the band mass of GaAs. Numerical calculations are in qualitative agreement with our data but differ considerably in detail.
Original language | English (US) |
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Article number | 016405 |
Journal | Physical review letters |
Volume | 94 |
Issue number | 1 |
DOIs | |
State | Published - Jan 14 2005 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- General Physics and Astronomy