Measurement of interface potential change and space charge region across metal/organic/metal structures using Kelvin probe force microscopy

O. Tal, W. Gao, C. K. Chan, A. Kahn, Y. Rosenwaks

Research output: Contribution to journalArticlepeer-review

20 Scopus citations

Abstract

We report on high-resolution potential measurements across complete metal/organic molecular semiconductor/metal structures using Kelvin probe force microscopy in inert atmosphere. It is found that the potential distribution at the metal/organic interfaces is in agreement with an interfacial abrupt potential changes and the work function of the different metals. The potential distribution across the organic layer strongly depends on its purification. In pure Alq 3 the potential profile is flat, while in nonpurified layers there is substantial potential bending probably due to the presence of deep traps. The effect of the measuring tip is calculated and discussed.

Original languageEnglish (US)
Pages (from-to)4148-4150
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number18
DOIs
StatePublished - Nov 1 2004

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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