Measurement of interface potential change and space charge region across metal/organic/metal structures using Kelvin probe force microscopy

O. Tal; W. Gao; C. K. Chan; A. Kahn; Y. Rosenwaks

doi:10.1063/1.1811805

Measurement of interface potential change and space charge region across metal/organic/metal structures using Kelvin probe force microscopy

O. Tal, W. Gao, C. K. Chan, A. Kahn, Y. Rosenwaks

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

We report on high-resolution potential measurements across complete metal/organic molecular semiconductor/metal structures using Kelvin probe force microscopy in inert atmosphere. It is found that the potential distribution at the metal/organic interfaces is in agreement with an interfacial abrupt potential changes and the work function of the different metals. The potential distribution across the organic layer strongly depends on its purification. In pure Alq ₃ the potential profile is flat, while in nonpurified layers there is substantial potential bending probably due to the presence of deep traps. The effect of the measuring tip is calculated and discussed.

Original language	English (US)
Pages (from-to)	4148-4150
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	18
DOIs	https://doi.org/10.1063/1.1811805
State	Published - Nov 1 2004

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.1811805

Cite this

@article{99901bab67af42b2b04004004cd3d4bc,

title = "Measurement of interface potential change and space charge region across metal/organic/metal structures using Kelvin probe force microscopy",

abstract = "We report on high-resolution potential measurements across complete metal/organic molecular semiconductor/metal structures using Kelvin probe force microscopy in inert atmosphere. It is found that the potential distribution at the metal/organic interfaces is in agreement with an interfacial abrupt potential changes and the work function of the different metals. The potential distribution across the organic layer strongly depends on its purification. In pure Alq 3 the potential profile is flat, while in nonpurified layers there is substantial potential bending probably due to the presence of deep traps. The effect of the measuring tip is calculated and discussed.",

author = "O. Tal and W. Gao and Chan, {C. K.} and A. Kahn and Y. Rosenwaks",

note = "Funding Information: This research was generously supported by US-Israel Binominal Science Foundation (BSF), Grant No. 2000-092.",

year = "2004",

month = nov,

day = "1",

doi = "10.1063/1.1811805",

language = "English (US)",

volume = "85",

pages = "4148--4150",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "18",

}

TY - JOUR

T1 - Measurement of interface potential change and space charge region across metal/organic/metal structures using Kelvin probe force microscopy

AU - Tal, O.

AU - Gao, W.

AU - Chan, C. K.

AU - Kahn, A.

AU - Rosenwaks, Y.

N1 - Funding Information: This research was generously supported by US-Israel Binominal Science Foundation (BSF), Grant No. 2000-092.

PY - 2004/11/1

Y1 - 2004/11/1

N2 - We report on high-resolution potential measurements across complete metal/organic molecular semiconductor/metal structures using Kelvin probe force microscopy in inert atmosphere. It is found that the potential distribution at the metal/organic interfaces is in agreement with an interfacial abrupt potential changes and the work function of the different metals. The potential distribution across the organic layer strongly depends on its purification. In pure Alq 3 the potential profile is flat, while in nonpurified layers there is substantial potential bending probably due to the presence of deep traps. The effect of the measuring tip is calculated and discussed.

AB - We report on high-resolution potential measurements across complete metal/organic molecular semiconductor/metal structures using Kelvin probe force microscopy in inert atmosphere. It is found that the potential distribution at the metal/organic interfaces is in agreement with an interfacial abrupt potential changes and the work function of the different metals. The potential distribution across the organic layer strongly depends on its purification. In pure Alq 3 the potential profile is flat, while in nonpurified layers there is substantial potential bending probably due to the presence of deep traps. The effect of the measuring tip is calculated and discussed.

UR - http://www.scopus.com/inward/record.url?scp=10044257814&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=10044257814&partnerID=8YFLogxK

U2 - 10.1063/1.1811805

DO - 10.1063/1.1811805

M3 - Article

AN - SCOPUS:10044257814

SN - 0003-6951

VL - 85

SP - 4148

EP - 4150

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 18

ER -

Measurement of interface potential change and space charge region across metal/organic/metal structures using Kelvin probe force microscopy

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this