Measurement and reduction of interface states at the recrystallized silicon-underlying insulator interface

Deep level transient spectroscopy and capacitance-voltage measurements have been performed on an inverted metal-oxide-semiconductor (MOS) capacitor structure to measure the interface state density at the recrystallized silicon-underlying insulator interface. The effects of different recrystallization caps, annealing steps, and different underlying oxides have been investigated. An interface state density in the mid 10^{1 0} cm^-2 eV^-1 range can be consistently obtained, enabling well-behaved MOS transistor channels on the bottom of the recrystallized films.