Abstract
Deep level transient spectroscopy and capacitance-voltage measurements have been performed on an inverted metal-oxide-semiconductor (MOS) capacitor structure to measure the interface state density at the recrystallized silicon-underlying insulator interface. The effects of different recrystallization caps, annealing steps, and different underlying oxides have been investigated. An interface state density in the mid 101 0 cm-2 eV-1 range can be consistently obtained, enabling well-behaved MOS transistor channels on the bottom of the recrystallized films.
Original language | English (US) |
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Pages (from-to) | 1171-1173 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 46 |
Issue number | 12 |
DOIs | |
State | Published - 1985 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)