Measurement and reduction of interface states at the recrystallized silicon-underlying insulator interface

James C. Sturm, James D. Plummer, James F. Gibbons

Research output: Contribution to journalArticle

7 Scopus citations

Abstract

Deep level transient spectroscopy and capacitance-voltage measurements have been performed on an inverted metal-oxide-semiconductor (MOS) capacitor structure to measure the interface state density at the recrystallized silicon-underlying insulator interface. The effects of different recrystallization caps, annealing steps, and different underlying oxides have been investigated. An interface state density in the mid 101 0 cm-2 eV-1 range can be consistently obtained, enabling well-behaved MOS transistor channels on the bottom of the recrystallized films.

Original languageEnglish (US)
Pages (from-to)1171-1173
Number of pages3
JournalApplied Physics Letters
Volume46
Issue number12
DOIs
StatePublished - Dec 1 1985
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Measurement and reduction of interface states at the recrystallized silicon-underlying insulator interface'. Together they form a unique fingerprint.

  • Cite this