Mean-field approach to ferromagnetism in (III, Mn)V diluted magnetic semiconductors at low carrier densities

Mona Berciu, R. N. Bhatt

Research output: Contribution to journalArticle

58 Scopus citations

Abstract

We present a detailed study, within the mean-field approximation, of an impurity band model for III-V diluted magnetic semiconductors. Such a model should be relevant at low carrier densities, below and near the metal-insulator transition. Positional disorder of the magnetic impurities inside the host semiconductor is shown to have observable consequences for the shape of the magnetization curve. Below the critical temperature the magnetization is spatially inhomogeneous, leading to very unusual temperature and magnetic field dependence of the average magnetization as well as specific heat. A metal-insulator transition is also observed, with a mobility edge inside the impurity band, in agreement with experimental measurements.

Original languageEnglish (US)
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume69
Issue number4
DOIs
StatePublished - Jan 9 2004

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Mean-field approach to ferromagnetism in (III, Mn)V diluted magnetic semiconductors at low carrier densities'. Together they form a unique fingerprint.

  • Cite this