MBE growth of ZnCdSe/ZnCdMgSe quantum-well infrared photodetectors

Aidong Shen, Arvind Pawan Ravikumar, Guopeng Chen, Kuaile Zhao, Adrian Alfaro-Martinez, Thor Garcia, Joel De Jesus, Maria C. Tamargo, Claire Gmachl

Research output: Contribution to journalArticlepeer-review

11 Scopus citations


The authors report the growth of quantum well infrared photodetectors (QWIPs) made from wide band gap II-VI semiconductors. ZnCdSe/ZnCdMgSe QWIPs in both medium-wave infrared and long-wave infrared regions were grown by molecular beam epitaxy on InP substrates. High-resolution x-ray diffraction and photoluminescence measurements showed that the as-grown samples have high structural and optical quality. Spectral responses with peaks at 8.7 μm and 4.0 μm have been obtained.

Original languageEnglish (US)
Article number03C113
JournalJournal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Issue number3
StatePublished - May 2013
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry


Dive into the research topics of 'MBE growth of ZnCdSe/ZnCdMgSe quantum-well infrared photodetectors'. Together they form a unique fingerprint.

Cite this