MBE growth of ZnCdSe/ZnCdMgSe quantum-well infrared photodetectors

Aidong Shen; Arvind Pawan Ravikumar; Guopeng Chen; Kuaile Zhao; Adrian Alfaro-Martinez; Thor Garcia; Joel De Jesus; Maria C. Tamargo; Claire Gmachl

doi:10.1116/1.4794383

MBE growth of ZnCdSe/ZnCdMgSe quantum-well infrared photodetectors

Aidong Shen, Arvind Pawan Ravikumar, Guopeng Chen, Kuaile Zhao, Adrian Alfaro-Martinez, Thor Garcia, Joel De Jesus, Maria C. Tamargo, Claire Gmachl

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

The authors report the growth of quantum well infrared photodetectors (QWIPs) made from wide band gap II-VI semiconductors. ZnCdSe/ZnCdMgSe QWIPs in both medium-wave infrared and long-wave infrared regions were grown by molecular beam epitaxy on InP substrates. High-resolution x-ray diffraction and photoluminescence measurements showed that the as-grown samples have high structural and optical quality. Spectral responses with peaks at 8.7 μm and 4.0 μm have been obtained.

Original language	English (US)
Article number	03C113
Journal	Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume	31
Issue number	3
DOIs	https://doi.org/10.1116/1.4794383
State	Published - May 2013
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Instrumentation
Process Chemistry and Technology
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

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@article{d5b089e0cd6546f4b6894e276e92f547,

title = "MBE growth of ZnCdSe/ZnCdMgSe quantum-well infrared photodetectors",

abstract = "The authors report the growth of quantum well infrared photodetectors (QWIPs) made from wide band gap II-VI semiconductors. ZnCdSe/ZnCdMgSe QWIPs in both medium-wave infrared and long-wave infrared regions were grown by molecular beam epitaxy on InP substrates. High-resolution x-ray diffraction and photoluminescence measurements showed that the as-grown samples have high structural and optical quality. Spectral responses with peaks at 8.7 μm and 4.0 μm have been obtained.",

author = "Aidong Shen and {Pawan Ravikumar}, Arvind and Guopeng Chen and Kuaile Zhao and Adrian Alfaro-Martinez and Thor Garcia and {De Jesus}, Joel and Tamargo, {Maria C.} and Claire Gmachl",

note = "Funding Information: This work was supported in part by MIRTHE (NSF-ERC # EEC-0540832), by NSF Grant No. ECCS-1028364, by NSF Grant No. HRD-0833180, and by a PSC-CUNY Award.",

year = "2013",

month = may,

doi = "10.1116/1.4794383",

language = "English (US)",

volume = "31",

journal = "Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics",

issn = "2166-2746",

publisher = "AVS Science and Technology Society",

number = "3",

}

TY - JOUR

T1 - MBE growth of ZnCdSe/ZnCdMgSe quantum-well infrared photodetectors

AU - Shen, Aidong

AU - Pawan Ravikumar, Arvind

AU - Chen, Guopeng

AU - Zhao, Kuaile

AU - Alfaro-Martinez, Adrian

AU - Garcia, Thor

AU - De Jesus, Joel

AU - Tamargo, Maria C.

AU - Gmachl, Claire

N1 - Funding Information: This work was supported in part by MIRTHE (NSF-ERC # EEC-0540832), by NSF Grant No. ECCS-1028364, by NSF Grant No. HRD-0833180, and by a PSC-CUNY Award.

PY - 2013/5

Y1 - 2013/5

N2 - The authors report the growth of quantum well infrared photodetectors (QWIPs) made from wide band gap II-VI semiconductors. ZnCdSe/ZnCdMgSe QWIPs in both medium-wave infrared and long-wave infrared regions were grown by molecular beam epitaxy on InP substrates. High-resolution x-ray diffraction and photoluminescence measurements showed that the as-grown samples have high structural and optical quality. Spectral responses with peaks at 8.7 μm and 4.0 μm have been obtained.

AB - The authors report the growth of quantum well infrared photodetectors (QWIPs) made from wide band gap II-VI semiconductors. ZnCdSe/ZnCdMgSe QWIPs in both medium-wave infrared and long-wave infrared regions were grown by molecular beam epitaxy on InP substrates. High-resolution x-ray diffraction and photoluminescence measurements showed that the as-grown samples have high structural and optical quality. Spectral responses with peaks at 8.7 μm and 4.0 μm have been obtained.

UR - http://www.scopus.com/inward/record.url?scp=84878366087&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84878366087&partnerID=8YFLogxK

U2 - 10.1116/1.4794383

DO - 10.1116/1.4794383

M3 - Article

AN - SCOPUS:84878366087

SN - 2166-2746

VL - 31

JO - Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

JF - Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

IS - 3

M1 - 03C113

ER -

MBE growth of ZnCdSe/ZnCdMgSe quantum-well infrared photodetectors

Abstract

All Science Journal Classification (ASJC) codes

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