MBE growth of two-dimensional electron system with extremely low disorder

M. Shayegan; V. J. Goldman; T. Sajoto; M. Santos; C. Jiang; H. Ito

doi:10.1016/0022-0248(89)90394-1

MBE growth of two-dimensional electron system with extremely low disorder

M. Shayegan
, V. J. Goldman
, T. Sajoto
, M. Santos
, C. Jiang
, H. Ito

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

We report on the growth of modulation-doped GaAs/Al_xGa_1-xAs heterostructures with extremely low disorder. The structures have mobilities (μ) on the order of 1×10⁶ cm²/V ·s (at 4.2 K) for areal densities (n_s) as low as 4×10¹⁰ cm^-2. In growing these structures we employed the atomic plane doping technique and ultrathick ( > 1000 Å) spacer layers with graded composition. These structures have the highest "figure-of-merit" for mobility (μ/n^3/2_s) ever reported.

Original language	English (US)
Pages (from-to)	250-252
Number of pages	3
Journal	Journal of Crystal Growth
Volume	95
Issue number	1-4
DOIs	https://doi.org/10.1016/0022-0248(89)90394-1
State	Published - Feb 2 1989

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/0022-0248(89)90394-1

Cite this

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title = "MBE growth of two-dimensional electron system with extremely low disorder",

abstract = "We report on the growth of modulation-doped GaAs/AlxGa1-xAs heterostructures with extremely low disorder. The structures have mobilities (μ) on the order of 1×106 cm2/V ·s (at 4.2 K) for areal densities (ns) as low as 4×1010 cm-2. In growing these structures we employed the atomic plane doping technique and ultrathick ( > 1000 {\AA}) spacer layers with graded composition. These structures have the highest {"}figure-of-merit{"} for mobility (μ/n3/2s) ever reported.",

author = "M. Shayegan and Goldman, \{V. J.\} and T. Sajoto and M. Santos and C. Jiang and H. Ito",

note = "Funding Information: all aspects of MBE growth. Encouragement and advice by D.C. Tsui. J.P. Harbison and A. Kahn are acknowledged. Support of this work by the National Science Foundation grants No. ECS-8553110 and DMR-8705002, Army Research Office Grant No. DAAG29-85-K-0098, Depart- ment of Defence University Research Instrumentation Program Grant No. DAALO3-87-G-0105, and a Grant by the New Jersey Commission on Science and Technology is acknowledged.",

year = "1989",

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doi = "10.1016/0022-0248(89)90394-1",

language = "English (US)",

volume = "95",

pages = "250--252",

journal = "Journal of Crystal Growth",

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TY - JOUR

T1 - MBE growth of two-dimensional electron system with extremely low disorder

AU - Shayegan, M.

AU - Goldman, V. J.

AU - Sajoto, T.

AU - Santos, M.

AU - Jiang, C.

AU - Ito, H.

N1 - Funding Information: all aspects of MBE growth. Encouragement and advice by D.C. Tsui. J.P. Harbison and A. Kahn are acknowledged. Support of this work by the National Science Foundation grants No. ECS-8553110 and DMR-8705002, Army Research Office Grant No. DAAG29-85-K-0098, Depart- ment of Defence University Research Instrumentation Program Grant No. DAALO3-87-G-0105, and a Grant by the New Jersey Commission on Science and Technology is acknowledged.

PY - 1989/2/2

Y1 - 1989/2/2

N2 - We report on the growth of modulation-doped GaAs/AlxGa1-xAs heterostructures with extremely low disorder. The structures have mobilities (μ) on the order of 1×106 cm2/V ·s (at 4.2 K) for areal densities (ns) as low as 4×1010 cm-2. In growing these structures we employed the atomic plane doping technique and ultrathick ( > 1000 Å) spacer layers with graded composition. These structures have the highest "figure-of-merit" for mobility (μ/n3/2s) ever reported.

AB - We report on the growth of modulation-doped GaAs/AlxGa1-xAs heterostructures with extremely low disorder. The structures have mobilities (μ) on the order of 1×106 cm2/V ·s (at 4.2 K) for areal densities (ns) as low as 4×1010 cm-2. In growing these structures we employed the atomic plane doping technique and ultrathick ( > 1000 Å) spacer layers with graded composition. These structures have the highest "figure-of-merit" for mobility (μ/n3/2s) ever reported.

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UR - https://www.scopus.com/pages/publications/0024605970#tab=citedBy

U2 - 10.1016/0022-0248(89)90394-1

DO - 10.1016/0022-0248(89)90394-1

M3 - Article

AN - SCOPUS:0024605970

SN - 0022-0248

VL - 95

SP - 250

EP - 252

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-4

ER -

MBE growth of two-dimensional electron system with extremely low disorder

Abstract

All Science Journal Classification (ASJC) codes

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