MBE growth of two-dimensional electron system with extremely low disorder

M. Shayegan, V. J. Goldman, T. Sajoto, M. Santos, C. Jiang, H. Ito

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

We report on the growth of modulation-doped GaAs/AlxGa1-xAs heterostructures with extremely low disorder. The structures have mobilities (μ) on the order of 1×106 cm2/V ·s (at 4.2 K) for areal densities (ns) as low as 4×1010 cm-2. In growing these structures we employed the atomic plane doping technique and ultrathick ( > 1000 Å) spacer layers with graded composition. These structures have the highest "figure-of-merit" for mobility (μ/n3/2s) ever reported.

Original languageEnglish (US)
Pages (from-to)250-252
Number of pages3
JournalJournal of Crystal Growth
Volume95
Issue number1-4
DOIs
StatePublished - Feb 2 1989

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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