MBE development of dilute nitrides for commercial long-wavelength laser applications

O. Malis; W. K. Liu; C. Gmachl; J. M. Fastenau; A. Joel; P. Gong; S. W. Bland; N. Moshegov

doi:10.1016/S0022-0248(02)02191-7

MBE development of dilute nitrides for commercial long-wavelength laser applications

O. Malis, W. K. Liu, C. Gmachl, J. M. Fastenau, A. Joel, P. Gong, S. W. Bland, N. Moshegov

Research output: Contribution to journal › Conference article › peer-review

7 Scopus citations

Abstract

InGaAsN-based materials are being developed at IQE, Inc. for 1.3 μm laser applications. Both MBE and MOCVD growth technology are employed and under investigation for commercial viability. The MBE effort focuses on optimizing the process for the large-volume manufacturing environment. The PL efficiencies of InGaAsN QWs grown with different nitrogen sources on single and multi-wafer MBE platforms are compared. The effect of various annealing treatments on the PL intensity and wavelength uniformity is also discussed in detail. The PL intensity of MBE-grown InGaAsN QWs is inferior to the efficiency of MOCVD samples emitting below 1.29 μm. MOCVD samples, however, exhibit a faster decay of the PL intensity with increasing wavelength, and loose their advantage above 1.29 μm. Deep and shallow ridge-waveguide lasers emitting at 1.28 μm were processed from the MBE material and the laser characteristics are discussed.

Original language	English (US)
Pages (from-to)	432-436
Number of pages	5
Journal	Journal of Crystal Growth
Volume	251
Issue number	1-4
DOIs	https://doi.org/10.1016/S0022-0248(02)02191-7
State	Published - Apr 2003
Externally published	Yes
Event	Proceedings of the Molecular Beam Epitaxy 2002 - San Francisco, CA, United States Duration: Sep 15 2002 → Sep 20 2002

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Keywords

A3. Molecular beam epitaxy
B1. Dilute nitrides
B1. InGaAsN

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10.1016/S0022-0248(02)02191-7

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@article{a86c5dfd9f414f0c910e874aa048e8b0,

title = "MBE development of dilute nitrides for commercial long-wavelength laser applications",

abstract = "InGaAsN-based materials are being developed at IQE, Inc. for 1.3 μm laser applications. Both MBE and MOCVD growth technology are employed and under investigation for commercial viability. The MBE effort focuses on optimizing the process for the large-volume manufacturing environment. The PL efficiencies of InGaAsN QWs grown with different nitrogen sources on single and multi-wafer MBE platforms are compared. The effect of various annealing treatments on the PL intensity and wavelength uniformity is also discussed in detail. The PL intensity of MBE-grown InGaAsN QWs is inferior to the efficiency of MOCVD samples emitting below 1.29 μm. MOCVD samples, however, exhibit a faster decay of the PL intensity with increasing wavelength, and loose their advantage above 1.29 μm. Deep and shallow ridge-waveguide lasers emitting at 1.28 μm were processed from the MBE material and the laser characteristics are discussed.",

keywords = "A3. Molecular beam epitaxy, B1. Dilute nitrides, B1. InGaAsN",

author = "O. Malis and Liu, {W. K.} and C. Gmachl and Fastenau, {J. M.} and A. Joel and P. Gong and Bland, {S. W.} and N. Moshegov",

year = "2003",

month = apr,

doi = "10.1016/S0022-0248(02)02191-7",

language = "English (US)",

volume = "251",

pages = "432--436",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "1-4",

note = "Proceedings of the Molecular Beam Epitaxy 2002 ; Conference date: 15-09-2002 Through 20-09-2002",

}

TY - JOUR

T1 - MBE development of dilute nitrides for commercial long-wavelength laser applications

AU - Malis, O.

AU - Liu, W. K.

AU - Gmachl, C.

AU - Fastenau, J. M.

AU - Joel, A.

AU - Gong, P.

AU - Bland, S. W.

AU - Moshegov, N.

PY - 2003/4

Y1 - 2003/4

N2 - InGaAsN-based materials are being developed at IQE, Inc. for 1.3 μm laser applications. Both MBE and MOCVD growth technology are employed and under investigation for commercial viability. The MBE effort focuses on optimizing the process for the large-volume manufacturing environment. The PL efficiencies of InGaAsN QWs grown with different nitrogen sources on single and multi-wafer MBE platforms are compared. The effect of various annealing treatments on the PL intensity and wavelength uniformity is also discussed in detail. The PL intensity of MBE-grown InGaAsN QWs is inferior to the efficiency of MOCVD samples emitting below 1.29 μm. MOCVD samples, however, exhibit a faster decay of the PL intensity with increasing wavelength, and loose their advantage above 1.29 μm. Deep and shallow ridge-waveguide lasers emitting at 1.28 μm were processed from the MBE material and the laser characteristics are discussed.

AB - InGaAsN-based materials are being developed at IQE, Inc. for 1.3 μm laser applications. Both MBE and MOCVD growth technology are employed and under investigation for commercial viability. The MBE effort focuses on optimizing the process for the large-volume manufacturing environment. The PL efficiencies of InGaAsN QWs grown with different nitrogen sources on single and multi-wafer MBE platforms are compared. The effect of various annealing treatments on the PL intensity and wavelength uniformity is also discussed in detail. The PL intensity of MBE-grown InGaAsN QWs is inferior to the efficiency of MOCVD samples emitting below 1.29 μm. MOCVD samples, however, exhibit a faster decay of the PL intensity with increasing wavelength, and loose their advantage above 1.29 μm. Deep and shallow ridge-waveguide lasers emitting at 1.28 μm were processed from the MBE material and the laser characteristics are discussed.

KW - A3. Molecular beam epitaxy

KW - B1. Dilute nitrides

KW - B1. InGaAsN

UR - http://www.scopus.com/inward/record.url?scp=0037381459&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037381459&partnerID=8YFLogxK

U2 - 10.1016/S0022-0248(02)02191-7

DO - 10.1016/S0022-0248(02)02191-7

M3 - Conference article

AN - SCOPUS:0037381459

SN - 0022-0248

VL - 251

SP - 432

EP - 436

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-4

T2 - Proceedings of the Molecular Beam Epitaxy 2002

Y2 - 15 September 2002 through 20 September 2002

ER -

MBE development of dilute nitrides for commercial long-wavelength laser applications

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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