MBE development of dilute nitrides for commercial long-wavelength laser applications

O. Malis, W. K. Liu, C. Gmachl, J. M. Fastenau, A. Joel, P. Gong, S. W. Bland, N. Moshegov

Research output: Contribution to journalConference articlepeer-review

4 Scopus citations

Abstract

InGaAsN-based materials are being developed at IQE, Inc. for 1.3 μm laser applications. Both MBE and MOCVD growth technology are employed and under investigation for commercial viability. The MBE effort focuses on optimizing the process for the large-volume manufacturing environment. The PL efficiencies of InGaAsN QWs grown with different nitrogen sources on single and multi-wafer MBE platforms are compared. The effect of various annealing treatments on the PL intensity and wavelength uniformity is also discussed in detail. The PL intensity of MBE-grown InGaAsN QWs is inferior to the efficiency of MOCVD samples emitting below 1.29 μm. MOCVD samples, however, exhibit a faster decay of the PL intensity with increasing wavelength, and loose their advantage above 1.29 μm. Deep and shallow ridge-waveguide lasers emitting at 1.28 μm were processed from the MBE material and the laser characteristics are discussed.

Original languageEnglish (US)
Pages (from-to)432-436
Number of pages5
JournalJournal of Crystal Growth
Volume251
Issue number1-4
DOIs
StatePublished - Apr 1 2003
Externally publishedYes
EventProceedings of the Molecular Beam Epitaxy 2002 - San Francisco, CA, United States
Duration: Sep 15 2002Sep 20 2002

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Keywords

  • A3. Molecular beam epitaxy
  • B1. Dilute nitrides
  • B1. InGaAsN

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