Material aspects of giga-Hertz ZnO TFTs for wireless systems

Yue Ma; Can Wu; Yoni Mehlman; Sigurd Wagner; Naveen Verma; James C. Sturm

doi:10.1557/s43580-022-00240-3

Material aspects of giga-Hertz ZnO TFTs for wireless systems

Yue Ma, Can Wu, Yoni Mehlman, Sigurd Wagner, Naveen Verma, James C. Sturm

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Having enabled high-value application capabilities through mass production of flat-panel displays, X-ray imagers, and solar panels, Large-Area Electronics (LAE) holds potential to open new frontiers in wireless applications for the Internet of Things and 5G/6G, by enabling unprecedented spatial control and power efficiency through large size and flexible form factor of radiative apertures. However, this requires boosting operation frequencies from the traditional limits in the range of 10–100’s of mega-Hertz to multi giga-Hertz. In this paper, we discuss critical device metrics, to characterize zinc-oxide (ZnO) thin-film transistor (TFT) operation frequency for both active (for signal amplification) and passive components in LAE-based circuits and systems. We then describe the key structural and material approaches towards recently demonstrated LAE-based giga-Hertz wireless systems employing ZnO TFTs. Bringing LAE to the giga-Hertz regime provides a path towards flexible and meter-scale monolithic integrated wireless systems. Graphical abstract: [Figure not available: see fulltext.]

Original language	English (US)
Pages (from-to)	265-272
Number of pages	8
Journal	MRS Advances
Volume	7
Issue number	13-14
DOIs	https://doi.org/10.1557/s43580-022-00240-3
State	Published - May 2022

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1557/s43580-022-00240-3

Cite this

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title = "Material aspects of giga-Hertz ZnO TFTs for wireless systems",

abstract = "Having enabled high-value application capabilities through mass production of flat-panel displays, X-ray imagers, and solar panels, Large-Area Electronics (LAE) holds potential to open new frontiers in wireless applications for the Internet of Things and 5G/6G, by enabling unprecedented spatial control and power efficiency through large size and flexible form factor of radiative apertures. However, this requires boosting operation frequencies from the traditional limits in the range of 10–100{\textquoteright}s of mega-Hertz to multi giga-Hertz. In this paper, we discuss critical device metrics, to characterize zinc-oxide (ZnO) thin-film transistor (TFT) operation frequency for both active (for signal amplification) and passive components in LAE-based circuits and systems. We then describe the key structural and material approaches towards recently demonstrated LAE-based giga-Hertz wireless systems employing ZnO TFTs. Bringing LAE to the giga-Hertz regime provides a path towards flexible and meter-scale monolithic integrated wireless systems. Graphical abstract: [Figure not available: see fulltext.]",

author = "Yue Ma and Can Wu and Yoni Mehlman and Sigurd Wagner and Naveen Verma and Sturm, {James C.}",

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T1 - Material aspects of giga-Hertz ZnO TFTs for wireless systems

AU - Ma, Yue

AU - Wu, Can

AU - Mehlman, Yoni

AU - Wagner, Sigurd

AU - Verma, Naveen

AU - Sturm, James C.

PY - 2022/5

Y1 - 2022/5

N2 - Having enabled high-value application capabilities through mass production of flat-panel displays, X-ray imagers, and solar panels, Large-Area Electronics (LAE) holds potential to open new frontiers in wireless applications for the Internet of Things and 5G/6G, by enabling unprecedented spatial control and power efficiency through large size and flexible form factor of radiative apertures. However, this requires boosting operation frequencies from the traditional limits in the range of 10–100’s of mega-Hertz to multi giga-Hertz. In this paper, we discuss critical device metrics, to characterize zinc-oxide (ZnO) thin-film transistor (TFT) operation frequency for both active (for signal amplification) and passive components in LAE-based circuits and systems. We then describe the key structural and material approaches towards recently demonstrated LAE-based giga-Hertz wireless systems employing ZnO TFTs. Bringing LAE to the giga-Hertz regime provides a path towards flexible and meter-scale monolithic integrated wireless systems. Graphical abstract: [Figure not available: see fulltext.]

AB - Having enabled high-value application capabilities through mass production of flat-panel displays, X-ray imagers, and solar panels, Large-Area Electronics (LAE) holds potential to open new frontiers in wireless applications for the Internet of Things and 5G/6G, by enabling unprecedented spatial control and power efficiency through large size and flexible form factor of radiative apertures. However, this requires boosting operation frequencies from the traditional limits in the range of 10–100’s of mega-Hertz to multi giga-Hertz. In this paper, we discuss critical device metrics, to characterize zinc-oxide (ZnO) thin-film transistor (TFT) operation frequency for both active (for signal amplification) and passive components in LAE-based circuits and systems. We then describe the key structural and material approaches towards recently demonstrated LAE-based giga-Hertz wireless systems employing ZnO TFTs. Bringing LAE to the giga-Hertz regime provides a path towards flexible and meter-scale monolithic integrated wireless systems. Graphical abstract: [Figure not available: see fulltext.]

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Material aspects of giga-Hertz ZnO TFTs for wireless systems

Abstract

All Science Journal Classification (ASJC) codes

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