Magnetotunneling in double-barrier heterostructures

A. Zaslavsky, D. C. Tsui, M. Santos, M. Shayegan

Research output: Contribution to journalArticle

42 Scopus citations

Abstract

We report measurements of the current-voltage characteristics of an asymmetric GaAs/AlxGa1-xAs double-barrier resonant-tunneling device in a magnetic field B parallel to the tunneling direction. In the resonant-tunneling regime the magnetic field induces weak steplike features in the I(V) curve and sawtooth oscillations in the I(B) curve that are periodic in inverse field. We explain these magnetotunneling features by Landau quantization of the three-dimensional states in the emitter and the two-dimensional states in the well, which induces steplike structure in the tunneling supply function. The experimental I(V,B) line shape is in good agreement with self-consistent numerical calculations.

Original languageEnglish (US)
Pages (from-to)9829-9833
Number of pages5
JournalPhysical Review B
Volume40
Issue number14
DOIs
StatePublished - Jan 1 1989

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Magnetotunneling in double-barrier heterostructures'. Together they form a unique fingerprint.

  • Cite this