Magnetotransport of a low-disorder triple-layer electron system in perpendicular or parallel magnetic fields

T. S. Lay; S. P. Shukla; J. Jo; X. Ying; M. Shayegan

doi:10.1016/0039-6028(96)00361-5

Magnetotransport of a low-disorder triple-layer electron system in perpendicular or parallel magnetic fields

T. S. Lay, S. P. Shukla, J. Jo, X. Ying, M. Shayegan

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Abstract

We report magnetotransport measurements on a coupled, triple-layer electron system subjected to either perpendicular (B_⊥) or parallel (B_∥) magnetic fields. The B_⊥ data reveal an abrupt collapse of the v=1 quantum Hall state as we increase the density in the side-wells. The results suggest the system makes a triple-to a double-layer transition at high B_⊥ which is driven by interlayer electron-electron interactions. In B_∥ data, we observe two types of resistance oscillations as we decrease front-gate bias: One corresponds to the passage of the Fermi level through the partial energy gaps arising from the B_∥-induced level anticrossings, the other is due to the enhanced Coulomb scattering as the system makes layer transitions.

Original language	English (US)
Pages (from-to)	171-175
Number of pages	5
Journal	Surface Science
Volume	361-362
DOIs	https://doi.org/10.1016/0039-6028(96)00361-5
State	Published - Jul 20 1996

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/0039-6028(96)00361-5

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title = "Magnetotransport of a low-disorder triple-layer electron system in perpendicular or parallel magnetic fields",

abstract = "We report magnetotransport measurements on a coupled, triple-layer electron system subjected to either perpendicular (B⊥) or parallel (B∥) magnetic fields. The B⊥ data reveal an abrupt collapse of the v=1 quantum Hall state as we increase the density in the side-wells. The results suggest the system makes a triple-to a double-layer transition at high B⊥ which is driven by interlayer electron-electron interactions. In B∥ data, we observe two types of resistance oscillations as we decrease front-gate bias: One corresponds to the passage of the Fermi level through the partial energy gaps arising from the B∥-induced level anticrossings, the other is due to the enhanced Coulomb scattering as the system makes layer transitions.",

author = "Lay, {T. S.} and Shukla, {S. P.} and J. Jo and X. Ying and M. Shayegan",

note = "Funding Information: We thank S. Parihar for help in self-consistent subband calculations and M.B. Santos in sample fabrication This work was supported by the National Science Foundation.",

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doi = "10.1016/0039-6028(96)00361-5",

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TY - JOUR

T1 - Magnetotransport of a low-disorder triple-layer electron system in perpendicular or parallel magnetic fields

AU - Lay, T. S.

AU - Shukla, S. P.

AU - Jo, J.

AU - Ying, X.

AU - Shayegan, M.

N1 - Funding Information: We thank S. Parihar for help in self-consistent subband calculations and M.B. Santos in sample fabrication This work was supported by the National Science Foundation.

PY - 1996/7/20

Y1 - 1996/7/20

N2 - We report magnetotransport measurements on a coupled, triple-layer electron system subjected to either perpendicular (B⊥) or parallel (B∥) magnetic fields. The B⊥ data reveal an abrupt collapse of the v=1 quantum Hall state as we increase the density in the side-wells. The results suggest the system makes a triple-to a double-layer transition at high B⊥ which is driven by interlayer electron-electron interactions. In B∥ data, we observe two types of resistance oscillations as we decrease front-gate bias: One corresponds to the passage of the Fermi level through the partial energy gaps arising from the B∥-induced level anticrossings, the other is due to the enhanced Coulomb scattering as the system makes layer transitions.

AB - We report magnetotransport measurements on a coupled, triple-layer electron system subjected to either perpendicular (B⊥) or parallel (B∥) magnetic fields. The B⊥ data reveal an abrupt collapse of the v=1 quantum Hall state as we increase the density in the side-wells. The results suggest the system makes a triple-to a double-layer transition at high B⊥ which is driven by interlayer electron-electron interactions. In B∥ data, we observe two types of resistance oscillations as we decrease front-gate bias: One corresponds to the passage of the Fermi level through the partial energy gaps arising from the B∥-induced level anticrossings, the other is due to the enhanced Coulomb scattering as the system makes layer transitions.

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SN - 0039-6028

VL - 361-362

SP - 171

EP - 175

JO - Surface Science

JF - Surface Science

ER -

Magnetotransport of a low-disorder triple-layer electron system in perpendicular or parallel magnetic fields

Abstract

All Science Journal Classification (ASJC) codes

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