Magnetotransport of a low-disorder triple-layer electron system in perpendicular or parallel magnetic fields

T. S. Lay, S. P. Shukla, J. Jo, X. Ying, M. Shayegan

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

We report magnetotransport measurements on a coupled, triple-layer electron system subjected to either perpendicular (B) or parallel (B) magnetic fields. The B data reveal an abrupt collapse of the v=1 quantum Hall state as we increase the density in the side-wells. The results suggest the system makes a triple-to a double-layer transition at high B which is driven by interlayer electron-electron interactions. In B data, we observe two types of resistance oscillations as we decrease front-gate bias: One corresponds to the passage of the Fermi level through the partial energy gaps arising from the B-induced level anticrossings, the other is due to the enhanced Coulomb scattering as the system makes layer transitions.

Original languageEnglish (US)
Pages (from-to)171-175
Number of pages5
JournalSurface Science
Volume361-362
DOIs
StatePublished - Jul 20 1996

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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