Magnetoresistance of SmMn2Ge2: A layered antiferromagnet

R. B. Van Dover, E. M. Gyorgy, R. J. Cava, J. J. Krajewski, R. J. Felder, W. F. Peck

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102 Scopus citations


The behavior of the magnetoresistance in SmMn2Ge2-a layered intermetallic compound-is analogous to the giant magnetoresistance recently reported for artificial metallic multilayers. A moderate magnetic field (2-15 kOe) is sufficient to switch SmMn2Ge2 from the antiferromagnetic (metamagnetic) state to saturation, at a temperature of ∼100 K, and this results in a resistance change of 4-8 %. The study of spin-dependent scattering in this and similar layered structures, in which nature has conspired to make essentially perfect interfaces, serves as a complement to the study of the artificial structures.

Original languageEnglish (US)
Pages (from-to)6134-6137
Number of pages4
JournalPhysical Review B
Issue number10
StatePublished - 1993
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics


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