Magnetoresistance of SmMn2Ge2: A layered antiferromagnet

R. B. Van Dover, E. M. Gyorgy, R. J. Cava, J. J. Krajewski, R. J. Felder, W. F. Peck

Research output: Contribution to journalArticle

93 Scopus citations

Abstract

The behavior of the magnetoresistance in SmMn2Ge2-a layered intermetallic compound-is analogous to the giant magnetoresistance recently reported for artificial metallic multilayers. A moderate magnetic field (2-15 kOe) is sufficient to switch SmMn2Ge2 from the antiferromagnetic (metamagnetic) state to saturation, at a temperature of ∼100 K, and this results in a resistance change of 4-8 %. The study of spin-dependent scattering in this and similar layered structures, in which nature has conspired to make essentially perfect interfaces, serves as a complement to the study of the artificial structures.

Original languageEnglish (US)
Pages (from-to)6134-6137
Number of pages4
JournalPhysical Review B
Volume47
Issue number10
DOIs
StatePublished - Jan 1 1993
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Magnetoresistance of SmMn2Ge2: A layered antiferromagnet'. Together they form a unique fingerprint.

Cite this