Magnetoresistance of SmMn2Ge2: A layered antiferromagnet

R. B. Van Dover; E. M. Gyorgy; R. J. Cava; J. J. Krajewski; R. J. Felder; W. F. Peck

doi:10.1103/PhysRevB.47.6134

Magnetoresistance of SmMn2Ge2: A layered antiferromagnet

R. B. Van Dover, E. M. Gyorgy, R. J. Cava, J. J. Krajewski, R. J. Felder, W. F. Peck

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104 Scopus citations

Abstract

The behavior of the magnetoresistance in SmMn2Ge2-a layered intermetallic compound-is analogous to the giant magnetoresistance recently reported for artificial metallic multilayers. A moderate magnetic field (2-15 kOe) is sufficient to switch SmMn2Ge2 from the antiferromagnetic (metamagnetic) state to saturation, at a temperature of ∼100 K, and this results in a resistance change of 4-8 %. The study of spin-dependent scattering in this and similar layered structures, in which nature has conspired to make essentially perfect interfaces, serves as a complement to the study of the artificial structures.

Original language	English (US)
Pages (from-to)	6134-6137
Number of pages	4
Journal	Physical Review B
Volume	47
Issue number	10
DOIs	https://doi.org/10.1103/PhysRevB.47.6134
State	Published - 1993
Externally published	Yes

All Science Journal Classification (ASJC) codes

Condensed Matter Physics

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10.1103/PhysRevB.47.6134

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abstract = "The behavior of the magnetoresistance in SmMn2Ge2-a layered intermetallic compound-is analogous to the giant magnetoresistance recently reported for artificial metallic multilayers. A moderate magnetic field (2-15 kOe) is sufficient to switch SmMn2Ge2 from the antiferromagnetic (metamagnetic) state to saturation, at a temperature of ∼100 K, and this results in a resistance change of 4-8 %. The study of spin-dependent scattering in this and similar layered structures, in which nature has conspired to make essentially perfect interfaces, serves as a complement to the study of the artificial structures.",

author = "{Van Dover}, {R. B.} and Gyorgy, {E. M.} and Cava, {R. J.} and Krajewski, {J. J.} and Felder, {R. J.} and Peck, {W. F.}",

year = "1993",

doi = "10.1103/PhysRevB.47.6134",

language = "English (US)",

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T2 - A layered antiferromagnet

AU - Van Dover, R. B.

AU - Gyorgy, E. M.

AU - Cava, R. J.

AU - Krajewski, J. J.

AU - Felder, R. J.

AU - Peck, W. F.

PY - 1993

Y1 - 1993

N2 - The behavior of the magnetoresistance in SmMn2Ge2-a layered intermetallic compound-is analogous to the giant magnetoresistance recently reported for artificial metallic multilayers. A moderate magnetic field (2-15 kOe) is sufficient to switch SmMn2Ge2 from the antiferromagnetic (metamagnetic) state to saturation, at a temperature of ∼100 K, and this results in a resistance change of 4-8 %. The study of spin-dependent scattering in this and similar layered structures, in which nature has conspired to make essentially perfect interfaces, serves as a complement to the study of the artificial structures.

AB - The behavior of the magnetoresistance in SmMn2Ge2-a layered intermetallic compound-is analogous to the giant magnetoresistance recently reported for artificial metallic multilayers. A moderate magnetic field (2-15 kOe) is sufficient to switch SmMn2Ge2 from the antiferromagnetic (metamagnetic) state to saturation, at a temperature of ∼100 K, and this results in a resistance change of 4-8 %. The study of spin-dependent scattering in this and similar layered structures, in which nature has conspired to make essentially perfect interfaces, serves as a complement to the study of the artificial structures.

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Magnetoresistance of SmMn2Ge2: A layered antiferromagnet

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