Abstract
The luminescence spectrum of magnetoexcitons in a 2D electron system in GaAs/AlGaAs is studied as a function of electron-hole separation, h, which is varied by applying front- and back-gate voltages. For Landau filling ν < 1 the energy splitting between the doublet components decreases for increasing h. For ν = 1/3 two regimes are observed - at small h the upper component has a positive-going cusp, while for larger h a positive-going step is observed. This may be related to charge fractionalization associated with anion excitons consisting of three quasi-electrons and a valence band hole.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 30-33 |
| Number of pages | 4 |
| Journal | Surface Science |
| Volume | 361-362 |
| DOIs | |
| State | Published - Jul 20 1996 |
| Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Materials Chemistry
Keywords
- Contacts
- Field effect
- Gallium arsenide
- Hall effect
- Luminescence
- Many body and quasi-particle theories
- Photoluminescence
- Quantum wells
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