Magnetoelectric resonant gate transistor

F. Li, R. Misra, Z. Fang, C. Curwen, Y. Wu, Q. M. Zhang, P. Schiffer, S. Tadigadapa, S. Datta

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations


Chip scale, high sensitivity magnetic sensor arrays capable of sensing below 100 picoTesla vector fields are of great interest to biomedical applications such as noninvasive medical imaging and diagnosis. Here, we present an integrated magnetoelectric resonant gate transistor (ME RGT) with nanoTesla magnetic field detection sensitivity. The device integrates Titanium (Ti)-Metglas® (Fe0.85B0.05Si0.1) based magnetostrictive unimorph freestanding cantilever beam coupled capacitively to the gate of an n-channel field effect transistor (FET). Using this configuration at the flexural resonance frequency of 4.9 kHz of the cantilever, a signal-to-noise ratio of 646, 000√Hz/Oe and a minimum detectable field of 15×10-11T/√Hz were obtained at room temperature. This result shows a significant improvement in the thin film ME sensor integration with standard CMOS process towards on-chip biomedical imaging applications.

Original languageEnglish (US)
Title of host publication2012 Solid-State Sensors, Actuators and Microsystems Workshop, Hilton Head 2012
EditorsMehran Mehregany, David J. Monk
PublisherTransducer Research Foundation
Number of pages4
ISBN (Electronic)9780964002494
StatePublished - 2012
Externally publishedYes
Event2012 Solid-State Sensors, Actuators and Microsystems Workshop, Hilton Head 2012 - Hilton Head, United States
Duration: Jun 3 2012Jun 7 2012

Publication series

NameTechnical Digest - Solid-State Sensors, Actuators, and Microsystems Workshop


Conference2012 Solid-State Sensors, Actuators and Microsystems Workshop, Hilton Head 2012
Country/TerritoryUnited States
CityHilton Head

All Science Journal Classification (ASJC) codes

  • Control and Systems Engineering
  • Electrical and Electronic Engineering
  • Hardware and Architecture


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