Magnetoelectric resonant gate transistor

F. Li; R. Misra; Z. Fang; C. Curwen; Y. Wu; Q. M. Zhang; P. Schiffer; S. Tadigadapa; S. Datta

Magnetoelectric resonant gate transistor

F. Li, R. Misra, Z. Fang, C. Curwen, Y. Wu, Q. M. Zhang, P. Schiffer, S. Tadigadapa, S. Datta

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Chip scale, high sensitivity magnetic sensor arrays capable of sensing below 100 picoTesla vector fields are of great interest to biomedical applications such as noninvasive medical imaging and diagnosis. Here, we present an integrated magnetoelectric resonant gate transistor (ME RGT) with nanoTesla magnetic field detection sensitivity. The device integrates Titanium (Ti)-Metglas® (Fe_0.85B_0.05Si_0.1) based magnetostrictive unimorph freestanding cantilever beam coupled capacitively to the gate of an n-channel field effect transistor (FET). Using this configuration at the flexural resonance frequency of 4.9 kHz of the cantilever, a signal-to-noise ratio of 646, 000√Hz/Oe and a minimum detectable field of 15×10^-11T/√Hz were obtained at room temperature. This result shows a significant improvement in the thin film ME sensor integration with standard CMOS process towards on-chip biomedical imaging applications.

Original language	English (US)
Title of host publication	2012 Solid-State Sensors, Actuators and Microsystems Workshop, Hilton Head 2012
Editors	Mehran Mehregany, David J. Monk
Publisher	Transducer Research Foundation
Pages	70-73
Number of pages	4
ISBN (Electronic)	9780964002494
State	Published - 2012
Externally published	Yes
Event	2012 Solid-State Sensors, Actuators and Microsystems Workshop, Hilton Head 2012 - Hilton Head, United States Duration: Jun 3 2012 → Jun 7 2012

Publication series

Name	Technical Digest - Solid-State Sensors, Actuators, and Microsystems Workshop

Conference

Conference	2012 Solid-State Sensors, Actuators and Microsystems Workshop, Hilton Head 2012
Country/Territory	United States
City	Hilton Head
Period	6/3/12 → 6/7/12

All Science Journal Classification (ASJC) codes

Control and Systems Engineering
Electrical and Electronic Engineering
Hardware and Architecture

Cite this

Li, F., Misra, R., Fang, Z., Curwen, C., Wu, Y., Zhang, Q. M., Schiffer, P., Tadigadapa, S., & Datta, S. (2012). Magnetoelectric resonant gate transistor. In M. Mehregany, & D. J. Monk (Eds.), 2012 Solid-State Sensors, Actuators and Microsystems Workshop, Hilton Head 2012 (pp. 70-73). (Technical Digest - Solid-State Sensors, Actuators, and Microsystems Workshop). Transducer Research Foundation.

@inproceedings{79e0030920b54c469355f19a70c2a7b6,

title = "Magnetoelectric resonant gate transistor",

abstract = "Chip scale, high sensitivity magnetic sensor arrays capable of sensing below 100 picoTesla vector fields are of great interest to biomedical applications such as noninvasive medical imaging and diagnosis. Here, we present an integrated magnetoelectric resonant gate transistor (ME RGT) with nanoTesla magnetic field detection sensitivity. The device integrates Titanium (Ti)-Metglas{\textregistered} (Fe0.85B0.05Si0.1) based magnetostrictive unimorph freestanding cantilever beam coupled capacitively to the gate of an n-channel field effect transistor (FET). Using this configuration at the flexural resonance frequency of 4.9 kHz of the cantilever, a signal-to-noise ratio of 646, 000√Hz/Oe and a minimum detectable field of 15×10-11T/√Hz were obtained at room temperature. This result shows a significant improvement in the thin film ME sensor integration with standard CMOS process towards on-chip biomedical imaging applications.",

author = "F. Li and R. Misra and Z. Fang and C. Curwen and Y. Wu and Zhang, {Q. M.} and P. Schiffer and S. Tadigadapa and S. Datta",

note = "Publisher Copyright: {\textcopyright} 2012 TRF.; 2012 Solid-State Sensors, Actuators and Microsystems Workshop, Hilton Head 2012 ; Conference date: 03-06-2012 Through 07-06-2012",

year = "2012",

language = "English (US)",

series = "Technical Digest - Solid-State Sensors, Actuators, and Microsystems Workshop",

publisher = "Transducer Research Foundation",

pages = "70--73",

editor = "Mehran Mehregany and Monk, {David J.}",

booktitle = "2012 Solid-State Sensors, Actuators and Microsystems Workshop, Hilton Head 2012",

}

Li, F, Misra, R, Fang, Z, Curwen, C, Wu, Y, Zhang, QM, Schiffer, P, Tadigadapa, S & Datta, S 2012, Magnetoelectric resonant gate transistor. in M Mehregany & DJ Monk (eds), 2012 Solid-State Sensors, Actuators and Microsystems Workshop, Hilton Head 2012. Technical Digest - Solid-State Sensors, Actuators, and Microsystems Workshop, Transducer Research Foundation, pp. 70-73, 2012 Solid-State Sensors, Actuators and Microsystems Workshop, Hilton Head 2012, Hilton Head, United States, 6/3/12.

Magnetoelectric resonant gate transistor. / Li, F.; Misra, R.; Fang, Z. et al.
2012 Solid-State Sensors, Actuators and Microsystems Workshop, Hilton Head 2012. ed. / Mehran Mehregany; David J. Monk. Transducer Research Foundation, 2012. p. 70-73 (Technical Digest - Solid-State Sensors, Actuators, and Microsystems Workshop).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Magnetoelectric resonant gate transistor

AU - Li, F.

AU - Misra, R.

AU - Fang, Z.

AU - Curwen, C.

AU - Wu, Y.

AU - Zhang, Q. M.

AU - Schiffer, P.

AU - Tadigadapa, S.

AU - Datta, S.

PY - 2012

Y1 - 2012

N2 - Chip scale, high sensitivity magnetic sensor arrays capable of sensing below 100 picoTesla vector fields are of great interest to biomedical applications such as noninvasive medical imaging and diagnosis. Here, we present an integrated magnetoelectric resonant gate transistor (ME RGT) with nanoTesla magnetic field detection sensitivity. The device integrates Titanium (Ti)-Metglas® (Fe0.85B0.05Si0.1) based magnetostrictive unimorph freestanding cantilever beam coupled capacitively to the gate of an n-channel field effect transistor (FET). Using this configuration at the flexural resonance frequency of 4.9 kHz of the cantilever, a signal-to-noise ratio of 646, 000√Hz/Oe and a minimum detectable field of 15×10-11T/√Hz were obtained at room temperature. This result shows a significant improvement in the thin film ME sensor integration with standard CMOS process towards on-chip biomedical imaging applications.

AB - Chip scale, high sensitivity magnetic sensor arrays capable of sensing below 100 picoTesla vector fields are of great interest to biomedical applications such as noninvasive medical imaging and diagnosis. Here, we present an integrated magnetoelectric resonant gate transistor (ME RGT) with nanoTesla magnetic field detection sensitivity. The device integrates Titanium (Ti)-Metglas® (Fe0.85B0.05Si0.1) based magnetostrictive unimorph freestanding cantilever beam coupled capacitively to the gate of an n-channel field effect transistor (FET). Using this configuration at the flexural resonance frequency of 4.9 kHz of the cantilever, a signal-to-noise ratio of 646, 000√Hz/Oe and a minimum detectable field of 15×10-11T/√Hz were obtained at room temperature. This result shows a significant improvement in the thin film ME sensor integration with standard CMOS process towards on-chip biomedical imaging applications.

UR - http://www.scopus.com/inward/record.url?scp=84873309594&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84873309594&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:84873309594

T3 - Technical Digest - Solid-State Sensors, Actuators, and Microsystems Workshop

SP - 70

EP - 73

BT - 2012 Solid-State Sensors, Actuators and Microsystems Workshop, Hilton Head 2012

A2 - Mehregany, Mehran

A2 - Monk, David J.

PB - Transducer Research Foundation

T2 - 2012 Solid-State Sensors, Actuators and Microsystems Workshop, Hilton Head 2012

Y2 - 3 June 2012 through 7 June 2012

ER -

Magnetoelectric resonant gate transistor

Abstract

Publication series

Conference

All Science Journal Classification (ASJC) codes

Other files and links

Fingerprint

Cite this