Abstract
We have observed a significant photoconductivity in a diode structure consisting of Ga1-xMnxAs (x = 0.04, p-type) and n-ZnSe separated by a recrystallized GaAs template. Under forward bias, the photoconductivity increases almost exponentially on lowering the temperature, shows a peak near 110 K, and then decreases by more than two orders of magnitude as Ga1-xMnxAs becomes ferromagnetic (Tc = 80 K). Such magnetization dependence is confirmed by applying an external magnetic field.
Original language | English (US) |
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Pages (from-to) | 135-138 |
Number of pages | 4 |
Journal | Institute of Physics Conference Series |
Volume | 184 |
State | Published - 2005 |
Externally published | Yes |
Event | 31st International Symposium of Compound Semiconductors 2004 - Seoul, Korea, Republic of Duration: Sep 12 2004 → Dec 16 2004 |
All Science Journal Classification (ASJC) codes
- General Physics and Astronomy