Magnetically induced reconstruction of the ground state in a few-electron Si quantum dot

L. P. Rokhinson; L. J. Guo; S. Y. Chou; D. C. Tsui

doi:10.1103/PhysRevLett.87.166802

Magnetically induced reconstruction of the ground state in a few-electron Si quantum dot

L. P. Rokhinson, L. J. Guo, S. Y. Chou, D. C. Tsui

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Abstract

A quantum dot in a new regime of small size, strong confinement, and strong electron-electron interactions was explored. Fluctuations in the CB peak positions at high B were observed for few-electron states. The observed phenomenon is a many-body effect.

Original language	English (US)
Article number	166802
Pages (from-to)	166802/1-166802/4
Journal	Physical review letters
Volume	87
Issue number	16
DOIs	https://doi.org/10.1103/PhysRevLett.87.166802
State	Published - Oct 15 2001

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1103/PhysRevLett.87.166802

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title = "Magnetically induced reconstruction of the ground state in a few-electron Si quantum dot",

abstract = "A quantum dot in a new regime of small size, strong confinement, and strong electron-electron interactions was explored. Fluctuations in the CB peak positions at high B were observed for few-electron states. The observed phenomenon is a many-body effect.",

author = "Rokhinson, \{L. P.\} and Guo, \{L. J.\} and Chou, \{S. Y.\} and Tsui, \{D. C.\}",

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AU - Rokhinson, L. P.

AU - Guo, L. J.

AU - Chou, S. Y.

AU - Tsui, D. C.

PY - 2001/10/15

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N2 - A quantum dot in a new regime of small size, strong confinement, and strong electron-electron interactions was explored. Fluctuations in the CB peak positions at high B were observed for few-electron states. The observed phenomenon is a many-body effect.

AB - A quantum dot in a new regime of small size, strong confinement, and strong electron-electron interactions was explored. Fluctuations in the CB peak positions at high B were observed for few-electron states. The observed phenomenon is a many-body effect.

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Magnetically induced reconstruction of the ground state in a few-electron Si quantum dot

Abstract

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