Magnetic proximity effect as a pathway to spintronic applications of topological insulators

Ivana Vobornik; Unnikrishnan Manju; Jun Fujii; Francesco Borgatti; Piero Torelli; Damjan Krizmancic; Yew San Hor; Robert J. Cava; Giancarlo Panaccione

doi:10.1021/nl201275q

Magnetic proximity effect as a pathway to spintronic applications of topological insulators

Ivana Vobornik, Unnikrishnan Manju, Jun Fujii, Francesco Borgatti, Piero Torelli, Damjan Krizmancic, Yew San Hor, Robert J. Cava, Giancarlo Panaccione

Research output: Contribution to journal › Article › peer-review

205 Scopus citations

Abstract

Spin-based electronics in topological insulators (TIs) is favored by the long spin coherence^1,2 and consequently fault-tolerant information storage. Magnetically doped TIs are ferromagnetic up to 13 K,³ well below any practical operating condition. Here we demonstrate that the long-range ferromagnetism at ambient temperature can be induced in Bi_2-xMn _xTe₃ by the magnetic proximity effect through deposited Fe overlayer. This result opens a new path to interface-controlled ferromagnetism in TI-based spintronic devices.

Original language	English (US)
Pages (from-to)	4079-4082
Number of pages	4
Journal	Nano Letters
Volume	11
Issue number	10
DOIs	https://doi.org/10.1021/nl201275q
State	Published - Oct 12 2011

All Science Journal Classification (ASJC) codes

General Chemistry
Condensed Matter Physics
Mechanical Engineering
Bioengineering
General Materials Science

Keywords

Topological insulators
X-ray magnetic circular dichroism
ferromagnetism
magnetic proximity effect

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10.1021/nl201275q

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@article{1350a02afe1c4a37813ea893601c456f,

title = "Magnetic proximity effect as a pathway to spintronic applications of topological insulators",

abstract = "Spin-based electronics in topological insulators (TIs) is favored by the long spin coherence1,2 and consequently fault-tolerant information storage. Magnetically doped TIs are ferromagnetic up to 13 K,3 well below any practical operating condition. Here we demonstrate that the long-range ferromagnetism at ambient temperature can be induced in Bi2-xMn xTe3 by the magnetic proximity effect through deposited Fe overlayer. This result opens a new path to interface-controlled ferromagnetism in TI-based spintronic devices.",

keywords = "Topological insulators, X-ray magnetic circular dichroism, ferromagnetism, magnetic proximity effect",

author = "Ivana Vobornik and Unnikrishnan Manju and Jun Fujii and Francesco Borgatti and Piero Torelli and Damjan Krizmancic and Hor, {Yew San} and Cava, {Robert J.} and Giancarlo Panaccione",

year = "2011",

month = oct,

day = "12",

doi = "10.1021/nl201275q",

language = "English (US)",

volume = "11",

pages = "4079--4082",

journal = "Nano Letters",

issn = "1530-6984",

publisher = "American Chemical Society",

number = "10",

}

TY - JOUR

T1 - Magnetic proximity effect as a pathway to spintronic applications of topological insulators

AU - Vobornik, Ivana

AU - Manju, Unnikrishnan

AU - Fujii, Jun

AU - Borgatti, Francesco

AU - Torelli, Piero

AU - Krizmancic, Damjan

AU - Hor, Yew San

AU - Cava, Robert J.

AU - Panaccione, Giancarlo

PY - 2011/10/12

Y1 - 2011/10/12

N2 - Spin-based electronics in topological insulators (TIs) is favored by the long spin coherence1,2 and consequently fault-tolerant information storage. Magnetically doped TIs are ferromagnetic up to 13 K,3 well below any practical operating condition. Here we demonstrate that the long-range ferromagnetism at ambient temperature can be induced in Bi2-xMn xTe3 by the magnetic proximity effect through deposited Fe overlayer. This result opens a new path to interface-controlled ferromagnetism in TI-based spintronic devices.

AB - Spin-based electronics in topological insulators (TIs) is favored by the long spin coherence1,2 and consequently fault-tolerant information storage. Magnetically doped TIs are ferromagnetic up to 13 K,3 well below any practical operating condition. Here we demonstrate that the long-range ferromagnetism at ambient temperature can be induced in Bi2-xMn xTe3 by the magnetic proximity effect through deposited Fe overlayer. This result opens a new path to interface-controlled ferromagnetism in TI-based spintronic devices.

KW - Topological insulators

KW - X-ray magnetic circular dichroism

KW - ferromagnetism

KW - magnetic proximity effect

UR - http://www.scopus.com/inward/record.url?scp=80054011442&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=80054011442&partnerID=8YFLogxK

U2 - 10.1021/nl201275q

DO - 10.1021/nl201275q

M3 - Article

C2 - 21861485

AN - SCOPUS:80054011442

SN - 1530-6984

VL - 11

SP - 4079

EP - 4082

JO - Nano Letters

JF - Nano Letters

IS - 10

ER -

Magnetic proximity effect as a pathway to spintronic applications of topological insulators

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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