Magnetic proximity effect as a pathway to spintronic applications of topological insulators

Ivana Vobornik, Unnikrishnan Manju, Jun Fujii, Francesco Borgatti, Piero Torelli, Damjan Krizmancic, Yew San Hor, Robert J. Cava, Giancarlo Panaccione

Research output: Contribution to journalArticlepeer-review

141 Scopus citations

Abstract

Spin-based electronics in topological insulators (TIs) is favored by the long spin coherence1,2 and consequently fault-tolerant information storage. Magnetically doped TIs are ferromagnetic up to 13 K,3 well below any practical operating condition. Here we demonstrate that the long-range ferromagnetism at ambient temperature can be induced in Bi2-xMn xTe3 by the magnetic proximity effect through deposited Fe overlayer. This result opens a new path to interface-controlled ferromagnetism in TI-based spintronic devices.

Original languageEnglish (US)
Pages (from-to)4079-4082
Number of pages4
JournalNano Letters
Volume11
Issue number10
DOIs
StatePublished - Oct 12 2011

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

Keywords

  • Topological insulators
  • X-ray magnetic circular dichroism
  • ferromagnetism
  • magnetic proximity effect

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