Magnetic properties of doped semiconductors

Research output: Contribution to journalArticle

28 Scopus citations

Abstract

Doped semiconductors, being a physical realization of an ensemble of one- electron (hydrogenic) atoms distributed randomly in space, are in a sense the simplest disordered system. Our current understanding of their magnetic properties is reviewed, for densities on both sides of a critical density nc at which the system undergoes a transition (at zero temperature) from an insulating phase (n < nc) to a metallic phase (n > nc). It is argued that the insulating phase is well modeled in terms of a disordered Heisenberg anti- ferromagnet, and quantitative agreement with experiment can be obtained. In contrast, the metallic phase just beyond nc, is not as well understood, and a number of possible candidate models are described. Finally, the issue of the effect of magnetic properties on the metal-insulator transition is addressed.

Original languageEnglish (US)
Pages (from-to)7-16
Number of pages10
JournalPhysica Scripta
Volume1986
Issue numberT14
DOIs
StatePublished - Jan 1 1986
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Mathematical Physics
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Magnetic properties of doped semiconductors'. Together they form a unique fingerprint.

Cite this