Magnetic-field-induced spin polarization of AlAs two-dimensional electrons

E. P. De Poortere, E. Tutuc, Y. P. Shkolnikov, K. Vakili, M. Shayegan

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

Two-dimensional (2D) electrons in an in-plane magnetic field become fully spin polarized above a field Bp, which we can determine from the in-plane magnetoresistance. We perform such measurements in modulation-doped AlAs electron systems, and find that the field Bp increases approximately linearly with 2D electron density. These results imply that the product \g*\m*, where g* is the effective g factor and m* the effective mass, is a constant essentially independent of density. While the deduced \g*\m* is enhanced relative to its band value by a factor of ∼4, we see no indication of its divergence as 2D density approaches zero. These observations are at odds with results obtained in Si, but qualitatively confirm spin-polarization studies of 2D GaAs carriers.

Original languageEnglish (US)
Article number161308
Pages (from-to)1613081-1613084
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume66
Issue number16
DOIs
StatePublished - Oct 15 2002

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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