Magnetic field induced mott transition of a one-component electron plasma in GaAs quantum wells

H. W. Yoon; M. D. Sturge; L. N. Pfeiffer

doi:10.1016/S0038-1098(97)00285-8

Magnetic field induced mott transition of a one-component electron plasma in GaAs quantum wells

H. W. Yoon, M. D. Sturge, L. N. Pfeiffer

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25 Scopus citations

Abstract

We have measured the time-resolved magneto-photoluminescence of mixed type GaAs/AlAs quantum wells, in which the electron density can be varied from ∼10⁹ to ∼10¹¹ cm^-2. We confirm that as the electron density is increased the precursor of the Mott transition is the trion (negatively charged exciton) and that the transition occurs when the Landau level filling factor v = 2. In zero field the transition is broad and ill-defined, but in a field it is sharp and is accompanied by an abrupt change in linewidth and radiative lifetime.

Original language	English (US)
Pages (from-to)	287-291
Number of pages	5
Journal	Solid State Communications
Volume	104
Issue number	5
DOIs	https://doi.org/10.1016/S0038-1098(97)00285-8
State	Published - Nov 1997
Externally published	Yes

All Science Journal Classification (ASJC) codes

General Chemistry
Condensed Matter Physics
Materials Chemistry

Keywords

A. Quantum wells
C. Electron-electron interactions
E. Luminescence
Optical properties
Semiconductors

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10.1016/S0038-1098(97)00285-8

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title = "Magnetic field induced mott transition of a one-component electron plasma in GaAs quantum wells",

abstract = "We have measured the time-resolved magneto-photoluminescence of mixed type GaAs/AlAs quantum wells, in which the electron density can be varied from ∼109 to ∼1011 cm-2. We confirm that as the electron density is increased the precursor of the Mott transition is the trion (negatively charged exciton) and that the transition occurs when the Landau level filling factor v = 2. In zero field the transition is broad and ill-defined, but in a field it is sharp and is accompanied by an abrupt change in linewidth and radiative lifetime.",

keywords = "A. Quantum wells, C. Electron-electron interactions, E. Luminescence, Optical properties, Semiconductors",

author = "Yoon, {H. W.} and Sturge, {M. D.} and Pfeiffer, {L. N.}",

year = "1997",

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doi = "10.1016/S0038-1098(97)00285-8",

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journal = "Solid State Communications",

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T1 - Magnetic field induced mott transition of a one-component electron plasma in GaAs quantum wells

AU - Yoon, H. W.

AU - Sturge, M. D.

AU - Pfeiffer, L. N.

PY - 1997/11

Y1 - 1997/11

N2 - We have measured the time-resolved magneto-photoluminescence of mixed type GaAs/AlAs quantum wells, in which the electron density can be varied from ∼109 to ∼1011 cm-2. We confirm that as the electron density is increased the precursor of the Mott transition is the trion (negatively charged exciton) and that the transition occurs when the Landau level filling factor v = 2. In zero field the transition is broad and ill-defined, but in a field it is sharp and is accompanied by an abrupt change in linewidth and radiative lifetime.

AB - We have measured the time-resolved magneto-photoluminescence of mixed type GaAs/AlAs quantum wells, in which the electron density can be varied from ∼109 to ∼1011 cm-2. We confirm that as the electron density is increased the precursor of the Mott transition is the trion (negatively charged exciton) and that the transition occurs when the Landau level filling factor v = 2. In zero field the transition is broad and ill-defined, but in a field it is sharp and is accompanied by an abrupt change in linewidth and radiative lifetime.

KW - A. Quantum wells

KW - C. Electron-electron interactions

KW - E. Luminescence

KW - Optical properties

KW - Semiconductors

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U2 - 10.1016/S0038-1098(97)00285-8

DO - 10.1016/S0038-1098(97)00285-8

M3 - Article

AN - SCOPUS:0031273508

SN - 0038-1098

VL - 104

SP - 287

EP - 291

JO - Solid State Communications

JF - Solid State Communications

IS - 5

ER -

Magnetic field induced mott transition of a one-component electron plasma in GaAs quantum wells

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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