Magnetic-field induced metal-insulator transition in InSb and Hg0.79Cd0.21Te at very low temperatures

M. Shayegan; V. J. Goldman; H. D. Drew; N. A. Fortune; J. S. Brooks

doi:10.1016/0038-1098(86)90603-4

Magnetic-field induced metal-insulator transition in InSb and Hg_0.79Cd_0.21Te at very low temperatures

M. Shayegan
, V. J. Goldman
, H. D. Drew
, N. A. Fortune
, J. S. Brooks

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

We report measurements of the transverse and Hall resistivities and of the nonlinear current-voltage characteristics in low compensation n-type InSb and Hg_0.79Cd_0.21Te samples at low temperatures (down to 0.08 K) and high magnetic fields. The results for the two materials are very similar and establish that the magnetic-field-induced metal-insulator transition in these narrow gap semiconductors is identical.

Original language	English (US)
Pages (from-to)	817-820
Number of pages	4
Journal	Solid State Communications
Volume	60
Issue number	10
DOIs	https://doi.org/10.1016/0038-1098(86)90603-4
State	Published - Dec 1986

All Science Journal Classification (ASJC) codes

General Chemistry
Condensed Matter Physics
Materials Chemistry

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10.1016/0038-1098(86)90603-4

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@article{602b3e7840e84985a317427f8dd2ef13,

title = "Magnetic-field induced metal-insulator transition in InSb and Hg0.79Cd0.21Te at very low temperatures",

abstract = "We report measurements of the transverse and Hall resistivities and of the nonlinear current-voltage characteristics in low compensation n-type InSb and Hg0.79Cd0.21Te samples at low temperatures (down to 0.08 K) and high magnetic fields. The results for the two materials are very similar and establish that the magnetic-field-induced metal-insulator transition in these narrow gap semiconductors is identical.",

author = "M. Shayegan and Goldman, \{V. J.\} and Drew, \{H. D.\} and Fortune, \{N. A.\} and Brooks, \{J. S.\}",

note = "Funding Information: \textasciitilde{}ents - Part of this work was performed hors were guest scientists at the Francis 1 Magnet Laboratory, which is supported ; National Science Foundation. We thank \textasciitilde{}r providing the Hgl-xCdxTe sample, and t B. Brandt for technical assistance. We upport through an NSF Presidential Young ward (Grant No. ECS-8553110) and an Development Award for M.S., partial sup-Army Research Office under grant No. 1-0098 for V.J.G., and support by NSF \textasciitilde{}-85-13626 for J.S.B. and N.A.F. Copyright: Copyright 2014 Elsevier B.V., All rights reserved.",

year = "1986",

month = dec,

doi = "10.1016/0038-1098(86)90603-4",

language = "English (US)",

volume = "60",

pages = "817--820",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Ltd",

number = "10",

}

TY - JOUR

T1 - Magnetic-field induced metal-insulator transition in InSb and Hg0.79Cd0.21Te at very low temperatures

AU - Shayegan, M.

AU - Goldman, V. J.

AU - Drew, H. D.

AU - Fortune, N. A.

AU - Brooks, J. S.

N1 - Funding Information: ~ents - Part of this work was performed hors were guest scientists at the Francis 1 Magnet Laboratory, which is supported ; National Science Foundation. We thank ~r providing the Hgl-xCdxTe sample, and t B. Brandt for technical assistance. We upport through an NSF Presidential Young ward (Grant No. ECS-8553110) and an Development Award for M.S., partial sup-Army Research Office under grant No. 1-0098 for V.J.G., and support by NSF ~-85-13626 for J.S.B. and N.A.F. Copyright: Copyright 2014 Elsevier B.V., All rights reserved.

PY - 1986/12

Y1 - 1986/12

N2 - We report measurements of the transverse and Hall resistivities and of the nonlinear current-voltage characteristics in low compensation n-type InSb and Hg0.79Cd0.21Te samples at low temperatures (down to 0.08 K) and high magnetic fields. The results for the two materials are very similar and establish that the magnetic-field-induced metal-insulator transition in these narrow gap semiconductors is identical.

AB - We report measurements of the transverse and Hall resistivities and of the nonlinear current-voltage characteristics in low compensation n-type InSb and Hg0.79Cd0.21Te samples at low temperatures (down to 0.08 K) and high magnetic fields. The results for the two materials are very similar and establish that the magnetic-field-induced metal-insulator transition in these narrow gap semiconductors is identical.

UR - https://www.scopus.com/pages/publications/46149134707

UR - https://www.scopus.com/pages/publications/46149134707#tab=citedBy

U2 - 10.1016/0038-1098(86)90603-4

DO - 10.1016/0038-1098(86)90603-4

M3 - Article

AN - SCOPUS:46149134707

SN - 0038-1098

VL - 60

SP - 817

EP - 820

JO - Solid State Communications

JF - Solid State Communications

IS - 10

ER -

Magnetic-field induced metal-insulator transition in InSb and Hg_0.79Cd_0.21Te at very low temperatures

Abstract

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