@article{602b3e7840e84985a317427f8dd2ef13,
title = "Magnetic-field induced metal-insulator transition in InSb and Hg0.79Cd0.21Te at very low temperatures",
abstract = "We report measurements of the transverse and Hall resistivities and of the nonlinear current-voltage characteristics in low compensation n-type InSb and Hg0.79Cd0.21Te samples at low temperatures (down to 0.08 K) and high magnetic fields. The results for the two materials are very similar and establish that the magnetic-field-induced metal-insulator transition in these narrow gap semiconductors is identical.",
author = "M. Shayegan and Goldman, {V. J.} and Drew, {H. D.} and Fortune, {N. A.} and Brooks, {J. S.}",
note = "Funding Information: ~ents - Part of this work was performed hors were guest scientists at the Francis 1 Magnet Laboratory, which is supported ; National Science Foundation. We thank ~r providing the Hgl-xCdxTe sample, and t B. Brandt for technical assistance. We upport through an NSF Presidential Young ward (Grant No. ECS-8553110) and an Development Award for M.S., partial sup-Army Research Office under grant No. 1-0098 for V.J.G., and support by NSF ~-85-13626 for J.S.B. and N.A.F. Copyright: Copyright 2014 Elsevier B.V., All rights reserved.",
year = "1986",
month = dec,
doi = "10.1016/0038-1098(86)90603-4",
language = "English (US)",
volume = "60",
pages = "817--820",
journal = "Solid State Communications",
issn = "0038-1098",
publisher = "Elsevier Limited",
number = "10",
}