We report measurements of the transverse and Hall resistivities and of the nonlinear current-voltage characteristics in low compensation n-type InSb and Hg0.79Cd0.21Te samples at low temperatures (down to 0.08 K) and high magnetic fields. The results for the two materials are very similar and establish that the magnetic-field-induced metal-insulator transition in these narrow gap semiconductors is identical.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Materials Chemistry