Magnetic-field induced metal-insulator transition in InSb and Hg0.79Cd0.21Te at very low temperatures

M. Shayegan, V. J. Goldman, H. D. Drew, N. A. Fortune, J. S. Brooks

Research output: Contribution to journalArticlepeer-review

13 Scopus citations


We report measurements of the transverse and Hall resistivities and of the nonlinear current-voltage characteristics in low compensation n-type InSb and Hg0.79Cd0.21Te samples at low temperatures (down to 0.08 K) and high magnetic fields. The results for the two materials are very similar and establish that the magnetic-field-induced metal-insulator transition in these narrow gap semiconductors is identical.

Original languageEnglish (US)
Pages (from-to)817-820
Number of pages4
JournalSolid State Communications
Issue number10
StatePublished - Dec 1986

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry


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