Magnetic-field-induced localization in InSb and Hg0.79Cd0.21Te

Mansour Shayegan, V. J. Goldman, H. D. Drew, D. A. Nelson, P. M. Tedrow

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Abstract

Transport measurements on n-type InSb are reported which display novel effects similar to those recently reported for Hg0.79Cd0.21Te near the magnetic-field-induced metal-insulator transition. We observe anisotropic temperature dependence of the longitudinal and transverse resistances at low fields, followed by an anomalous behavior of the transverse and Hall resistances below the localization field. The data for the two systems are compared, and the universality of the effects is discussed.

Original languageEnglish (US)
Pages (from-to)6952-6955
Number of pages4
JournalPhysical Review B
Volume32
Issue number10
DOIs
StatePublished - Jan 1 1985

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

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    Shayegan, M., Goldman, V. J., Drew, H. D., Nelson, D. A., & Tedrow, P. M. (1985). Magnetic-field-induced localization in InSb and Hg0.79Cd0.21Te. Physical Review B, 32(10), 6952-6955. https://doi.org/10.1103/PhysRevB.32.6952