Magnetic-field-induced localization in InSb and Hg0.79Cd0.21Te

M. Shayegan; V. J. Goldman; H. D. Drew; D. A. Nelson; P. M. Tedrow

doi:10.1103/PhysRevB.32.6952

Magnetic-field-induced localization in InSb and Hg0.79Cd0.21Te

M. Shayegan, V. J. Goldman, H. D. Drew, D. A. Nelson, P. M. Tedrow

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27 Scopus citations

Abstract

Transport measurements on n-type InSb are reported which display novel effects similar to those recently reported for Hg0.79Cd0.21Te near the magnetic-field-induced metal-insulator transition. We observe anisotropic temperature dependence of the longitudinal and transverse resistances at low fields, followed by an anomalous behavior of the transverse and Hall resistances below the localization field. The data for the two systems are compared, and the universality of the effects is discussed.

Original language	English (US)
Pages (from-to)	6952-6955
Number of pages	4
Journal	Physical Review B
Volume	32
Issue number	10
DOIs	https://doi.org/10.1103/PhysRevB.32.6952
State	Published - 1985

All Science Journal Classification (ASJC) codes

Condensed Matter Physics

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10.1103/PhysRevB.32.6952

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abstract = "Transport measurements on n-type InSb are reported which display novel effects similar to those recently reported for Hg0.79Cd0.21Te near the magnetic-field-induced metal-insulator transition. We observe anisotropic temperature dependence of the longitudinal and transverse resistances at low fields, followed by an anomalous behavior of the transverse and Hall resistances below the localization field. The data for the two systems are compared, and the universality of the effects is discussed.",

author = "M. Shayegan and Goldman, {V. J.} and Drew, {H. D.} and Nelson, {D. A.} and Tedrow, {P. M.}",

year = "1985",

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language = "English (US)",

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journal = "Physical Review B",

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T1 - Magnetic-field-induced localization in InSb and Hg0.79Cd0.21Te

AU - Shayegan, M.

AU - Goldman, V. J.

AU - Drew, H. D.

AU - Nelson, D. A.

AU - Tedrow, P. M.

PY - 1985

Y1 - 1985

N2 - Transport measurements on n-type InSb are reported which display novel effects similar to those recently reported for Hg0.79Cd0.21Te near the magnetic-field-induced metal-insulator transition. We observe anisotropic temperature dependence of the longitudinal and transverse resistances at low fields, followed by an anomalous behavior of the transverse and Hall resistances below the localization field. The data for the two systems are compared, and the universality of the effects is discussed.

AB - Transport measurements on n-type InSb are reported which display novel effects similar to those recently reported for Hg0.79Cd0.21Te near the magnetic-field-induced metal-insulator transition. We observe anisotropic temperature dependence of the longitudinal and transverse resistances at low fields, followed by an anomalous behavior of the transverse and Hall resistances below the localization field. The data for the two systems are compared, and the universality of the effects is discussed.

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DO - 10.1103/PhysRevB.32.6952

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IS - 10

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Magnetic-field-induced localization in InSb and Hg0.79Cd0.21Te

Abstract

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