TY - JOUR
T1 - Magnetic and electronic properties of CaMn2Bi2
T2 - A possible hybridization gap semiconductor
AU - Gibson, Q. D.
AU - Wu, H.
AU - Liang, T.
AU - Ali, M. N.
AU - Ong, N. P.
AU - Huang, Q.
AU - Cava, R. J.
N1 - Publisher Copyright:
© 2015 American Physical Society.
PY - 2015/2/27
Y1 - 2015/2/27
N2 - We report the magnetic and electronic properties of CaMn2Bi2, which has a structure based on a triangular bilayer of Mn, rather than the ThCr2Si2 structure commonly encountered for 122 compounds in intermetallic systems. CaMn2Bi2 has an antiferromagnetic ground state, with a TN of 150 K, and for a 250 K temperature range above TN does not exhibit Curie-Weiss behavior, indicating the presence of strong magnetic correlations at high temperatures. Resistivity measurements show that CaMn2Bi2 exhibits semiconducting properties at low temperatures, with an energy gap of only 62 meV, indicating it to be a very narrow band gap semiconductor. The electronic structure of CaMn2Bi2, examined via ab-initio electronic structure calculations, indicates that Mn 3d orbital hybridization is essential for the formation of the band gap, suggesting that CaMn2Bi2 may be a hybridization-gap semiconductor.
AB - We report the magnetic and electronic properties of CaMn2Bi2, which has a structure based on a triangular bilayer of Mn, rather than the ThCr2Si2 structure commonly encountered for 122 compounds in intermetallic systems. CaMn2Bi2 has an antiferromagnetic ground state, with a TN of 150 K, and for a 250 K temperature range above TN does not exhibit Curie-Weiss behavior, indicating the presence of strong magnetic correlations at high temperatures. Resistivity measurements show that CaMn2Bi2 exhibits semiconducting properties at low temperatures, with an energy gap of only 62 meV, indicating it to be a very narrow band gap semiconductor. The electronic structure of CaMn2Bi2, examined via ab-initio electronic structure calculations, indicates that Mn 3d orbital hybridization is essential for the formation of the band gap, suggesting that CaMn2Bi2 may be a hybridization-gap semiconductor.
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U2 - 10.1103/PhysRevB.91.085128
DO - 10.1103/PhysRevB.91.085128
M3 - Article
AN - SCOPUS:84924022494
SN - 1098-0121
VL - 91
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
IS - 8
M1 - 085128
ER -