Luminescence processes in Si1-xGex/Si heterostructures grown by chemical vapor deposition

J. C. Sturm, X. Xiao, Q. Mi, L. C. Lenchyshyn, M. L.W. Thewalt

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Scopus citations

Abstract

Well-resolved band-edge exciton photoluminescence (PL) has been observed in strained Si1-xGex heterostructures grown on Si(100) by rapid thermal chemical vapor deposition. The luminescence is due to shallow-impurity bound excitons at low temperatures (under 20K) and at higher temperatures is due to free excitons or electron-hole plasmas, depending on the pump power. The luminescence can also be electrically pumped, with both the electroluminescence and PL persisting above room temperature in samples with a sufficient bandgap offset. Loss of carrier confinement and subsequent non-radiative recombination outside the Si1-xGex is found to be the reason for reduced PL and EL at high temperature.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium Proceedings
PublisherPubl by Materials Research Society
Pages69-78
Number of pages10
ISBN (Print)1558991948, 9781558991941
DOIs
StatePublished - Jan 1 1993
EventProceedings of the Symposium on Silicon-Based Optoelectronic Materials - San Francisco, CA, USA
Duration: Apr 12 1993Apr 14 1993

Publication series

NameMaterials Research Society Symposium Proceedings
Volume298
ISSN (Print)0272-9172

Other

OtherProceedings of the Symposium on Silicon-Based Optoelectronic Materials
CitySan Francisco, CA, USA
Period4/12/934/14/93

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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