Luminescence processes in Si1-xGex/Si heterostructures grown by chemical vapor deposition

J. C. Sturm; X. Xiao; Q. Mi; L. C. Lenchyshyn; M. L.W. Thewalt

doi:10.1557/proc-298-69

Luminescence processes in Si_1-xGe_x/Si heterostructures grown by chemical vapor deposition

J. C. Sturm, X. Xiao, Q. Mi, L. C. Lenchyshyn, M. L.W. Thewalt

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

6 Scopus citations

Abstract

Well-resolved band-edge exciton photoluminescence (PL) has been observed in strained Si_1-xGe_x heterostructures grown on Si(100) by rapid thermal chemical vapor deposition. The luminescence is due to shallow-impurity bound excitons at low temperatures (under 20K) and at higher temperatures is due to free excitons or electron-hole plasmas, depending on the pump power. The luminescence can also be electrically pumped, with both the electroluminescence and PL persisting above room temperature in samples with a sufficient bandgap offset. Loss of carrier confinement and subsequent non-radiative recombination outside the Si_1-xGe_x is found to be the reason for reduced PL and EL at high temperature.

Original language	English (US)
Title of host publication	Materials Research Society Symposium Proceedings
Publisher	Publ by Materials Research Society
Pages	69-78
Number of pages	10
ISBN (Print)	1558991948, 9781558991941
DOIs	https://doi.org/10.1557/proc-298-69
State	Published - 1993
Event	Proceedings of the Symposium on Silicon-Based Optoelectronic Materials - San Francisco, CA, USA Duration: Apr 12 1993 → Apr 14 1993

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	298
ISSN (Print)	0272-9172

Other

Other	Proceedings of the Symposium on Silicon-Based Optoelectronic Materials
City	San Francisco, CA, USA
Period	4/12/93 → 4/14/93

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1557/proc-298-69

Cite this

@inproceedings{31950283bccf4a0b8e2069f4eabb7040,

title = "Luminescence processes in Si1-xGex/Si heterostructures grown by chemical vapor deposition",

abstract = "Well-resolved band-edge exciton photoluminescence (PL) has been observed in strained Si1-xGex heterostructures grown on Si(100) by rapid thermal chemical vapor deposition. The luminescence is due to shallow-impurity bound excitons at low temperatures (under 20K) and at higher temperatures is due to free excitons or electron-hole plasmas, depending on the pump power. The luminescence can also be electrically pumped, with both the electroluminescence and PL persisting above room temperature in samples with a sufficient bandgap offset. Loss of carrier confinement and subsequent non-radiative recombination outside the Si1-xGex is found to be the reason for reduced PL and EL at high temperature.",

author = "Sturm, {J. C.} and X. Xiao and Q. Mi and Lenchyshyn, {L. C.} and Thewalt, {M. L.W.}",

year = "1993",

doi = "10.1557/proc-298-69",

language = "English (US)",

isbn = "1558991948",

series = "Materials Research Society Symposium Proceedings",

publisher = "Publ by Materials Research Society",

pages = "69--78",

booktitle = "Materials Research Society Symposium Proceedings",

note = "Proceedings of the Symposium on Silicon-Based Optoelectronic Materials ; Conference date: 12-04-1993 Through 14-04-1993",

}

Sturm, JC, Xiao, X, Mi, Q, Lenchyshyn, LC & Thewalt, MLW 1993, Luminescence processes in Si_1-xGe_x/Si heterostructures grown by chemical vapor deposition. in Materials Research Society Symposium Proceedings. Materials Research Society Symposium Proceedings, vol. 298, Publ by Materials Research Society, pp. 69-78, Proceedings of the Symposium on Silicon-Based Optoelectronic Materials, San Francisco, CA, USA, 4/12/93. https://doi.org/10.1557/proc-298-69

Luminescence processes in Si_1-xGe_x/Si heterostructures grown by chemical vapor deposition. / Sturm, J. C.; Xiao, X.; Mi, Q. et al.
Materials Research Society Symposium Proceedings. Publ by Materials Research Society, 1993. p. 69-78 (Materials Research Society Symposium Proceedings; Vol. 298).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Luminescence processes in Si1-xGex/Si heterostructures grown by chemical vapor deposition

AU - Sturm, J. C.

AU - Xiao, X.

AU - Mi, Q.

AU - Lenchyshyn, L. C.

AU - Thewalt, M. L.W.

PY - 1993

Y1 - 1993

N2 - Well-resolved band-edge exciton photoluminescence (PL) has been observed in strained Si1-xGex heterostructures grown on Si(100) by rapid thermal chemical vapor deposition. The luminescence is due to shallow-impurity bound excitons at low temperatures (under 20K) and at higher temperatures is due to free excitons or electron-hole plasmas, depending on the pump power. The luminescence can also be electrically pumped, with both the electroluminescence and PL persisting above room temperature in samples with a sufficient bandgap offset. Loss of carrier confinement and subsequent non-radiative recombination outside the Si1-xGex is found to be the reason for reduced PL and EL at high temperature.

AB - Well-resolved band-edge exciton photoluminescence (PL) has been observed in strained Si1-xGex heterostructures grown on Si(100) by rapid thermal chemical vapor deposition. The luminescence is due to shallow-impurity bound excitons at low temperatures (under 20K) and at higher temperatures is due to free excitons or electron-hole plasmas, depending on the pump power. The luminescence can also be electrically pumped, with both the electroluminescence and PL persisting above room temperature in samples with a sufficient bandgap offset. Loss of carrier confinement and subsequent non-radiative recombination outside the Si1-xGex is found to be the reason for reduced PL and EL at high temperature.

UR - http://www.scopus.com/inward/record.url?scp=0027837385&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0027837385&partnerID=8YFLogxK

U2 - 10.1557/proc-298-69

DO - 10.1557/proc-298-69

M3 - Conference contribution

AN - SCOPUS:0027837385

SN - 1558991948

SN - 9781558991941

T3 - Materials Research Society Symposium Proceedings

SP - 69

EP - 78

BT - Materials Research Society Symposium Proceedings

PB - Publ by Materials Research Society

T2 - Proceedings of the Symposium on Silicon-Based Optoelectronic Materials

Y2 - 12 April 1993 through 14 April 1993

ER -