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Luminescence above the Tauc gap in a-Si:H
P. M. Fauchet
, I. H. Campbell
,
S. A. Lyon
, R. J. Nemanich
Electrical and Computer Engineering
Princeton Materials Institute
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Keyphrases
Luminescence
100%
A-Si
100%
Tauc Gap
100%
Photoluminescence
33%
First Observation
33%
Defect Density
33%
Carrier Dynamics
33%
Dependence on Temperature
33%
Spectral Dependence
33%
Deep Level Defects
33%
Full Characterization
33%
Laser Power Density
33%
Engineering
Defect Density
100%
Laser Power Density
100%