Luminescence above the Tauc gap in a-Si:H

P. M. Fauchet; I. H. Campbell; S. A. Lyon; R. J. Nemanich

doi:10.1016/0022-3093(89)90136-1

Luminescence above the Tauc gap in a-Si:H

P. M. Fauchet
, I. H. Campbell
, S. A. Lyon
, R. J. Nemanich

Research output: Contribution to journal › Article › peer-review

Abstract

We report the first observation and full characterization of the weak photoluminescence signal at and above the Tauc gap in a-Si:H. Detailed spectral dependence on temperature (from 10 K to 500 K), Tauc gap, deep defect density and laser power density is reported. The origin of the signal is discussed in terms of the carrier dynamics.

Original language	English (US)
Pages (from-to)	277-279
Number of pages	3
Journal	Journal of Non-Crystalline Solids
Volume	114
Issue number	PART 1
DOIs	https://doi.org/10.1016/0022-3093(89)90136-1
State	Published - Dec 1 1989

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Condensed Matter Physics
Materials Chemistry

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10.1016/0022-3093(89)90136-1

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title = "Luminescence above the Tauc gap in a-Si:H",

abstract = "We report the first observation and full characterization of the weak photoluminescence signal at and above the Tauc gap in a-Si:H. Detailed spectral dependence on temperature (from 10 K to 500 K), Tauc gap, deep defect density and laser power density is reported. The origin of the signal is discussed in terms of the carrier dynamics.",

author = "Fauchet, \{P. M.\} and Campbell, \{I. H.\} and Lyon, \{S. A.\} and Nemanich, \{R. J.\}",

note = "Funding Information: The weak PL above the bandgap has been observed and eharacterized for the first time. We find that it corresponds to geminate recombination and that its strength can be related to the increasing distance between partners during thermalization. Below an onset energy, the PL increases exponentially. A model where the holes become self-trapped appears to explain the data successfully. At low temperature, it is possible to obtain the radius of the electron wavefunction near the mobility edge, which we find equal to 1 nm. P.M.F. and I.H.C. acknowledge support from NSF through the Presidential Young Investigator program. P.M.F. is also an Alfred P. Sloan Research Fellow.",

year = "1989",

month = dec,

day = "1",

doi = "10.1016/0022-3093(89)90136-1",

language = "English (US)",

volume = "114",

pages = "277--279",

journal = "Journal of Non-Crystalline Solids",

issn = "0022-3093",

publisher = "Elsevier B.V.",

number = "PART 1",

}

TY - JOUR

T1 - Luminescence above the Tauc gap in a-Si:H

AU - Fauchet, P. M.

AU - Campbell, I. H.

AU - Lyon, S. A.

AU - Nemanich, R. J.

N1 - Funding Information: The weak PL above the bandgap has been observed and eharacterized for the first time. We find that it corresponds to geminate recombination and that its strength can be related to the increasing distance between partners during thermalization. Below an onset energy, the PL increases exponentially. A model where the holes become self-trapped appears to explain the data successfully. At low temperature, it is possible to obtain the radius of the electron wavefunction near the mobility edge, which we find equal to 1 nm. P.M.F. and I.H.C. acknowledge support from NSF through the Presidential Young Investigator program. P.M.F. is also an Alfred P. Sloan Research Fellow.

PY - 1989/12/1

Y1 - 1989/12/1

N2 - We report the first observation and full characterization of the weak photoluminescence signal at and above the Tauc gap in a-Si:H. Detailed spectral dependence on temperature (from 10 K to 500 K), Tauc gap, deep defect density and laser power density is reported. The origin of the signal is discussed in terms of the carrier dynamics.

AB - We report the first observation and full characterization of the weak photoluminescence signal at and above the Tauc gap in a-Si:H. Detailed spectral dependence on temperature (from 10 K to 500 K), Tauc gap, deep defect density and laser power density is reported. The origin of the signal is discussed in terms of the carrier dynamics.

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UR - https://www.scopus.com/pages/publications/0024809471#tab=citedBy

U2 - 10.1016/0022-3093(89)90136-1

DO - 10.1016/0022-3093(89)90136-1

M3 - Article

AN - SCOPUS:0024809471

SN - 0022-3093

VL - 114

SP - 277

EP - 279

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

IS - PART 1

ER -

Luminescence above the Tauc gap in a-Si:H

Abstract

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