We report the first observation and full characterization of the weak photoluminescence signal at and above the Tauc gap in a-Si:H. Detailed spectral dependence on temperature (from 10 K to 500 K), Tauc gap, deep defect density and laser power density is reported. The origin of the signal is discussed in terms of the carrier dynamics.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Condensed Matter Physics
- Materials Chemistry