Luminescence above the Tauc gap in a-Si:H

P. M. Fauchet, I. H. Campbell, S. A. Lyon, R. J. Nemanich

Research output: Contribution to journalArticlepeer-review

Abstract

We report the first observation and full characterization of the weak photoluminescence signal at and above the Tauc gap in a-Si:H. Detailed spectral dependence on temperature (from 10 K to 500 K), Tauc gap, deep defect density and laser power density is reported. The origin of the signal is discussed in terms of the carrier dynamics.

Original languageEnglish (US)
Pages (from-to)277-279
Number of pages3
JournalJournal of Non-Crystalline Solids
Volume114
Issue numberPART 1
DOIs
StatePublished - Dec 1 1989

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry

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