Low voltage-defect quantum cascade laser with heterogeneous injector regions

Anthony J. Hoffman; Stephan Schartner; Scott S. Howard; Kale J. Franz; Fred Towner; Claire F. Gmachl

doi:10.1364/OE.15.015818

Low voltage-defect quantum cascade laser with heterogeneous injector regions

Anthony J. Hoffman, Stephan Schartner, Scott S. Howard, Kale J. Franz, Fred Towner, Claire F. Gmachl

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

We demonstrate an In_0.635Al_0.356As/In _0.678Ga_0.322As strain compensated quantum cascade laser that employs heterogeneous injector regions for low voltage defect operation. The active core consists of interdigitated undoped and doped injectors followed by nominally identical wavelength optical transitions. The undoped injector regions are designed with reduced voltage defect while the doped injectors are of a more conventional design. The measured average voltage defect is less than 79 meV. At 80 K, a 2.3 mm long, back facet high reflectance coated laser has an emission wavelength of 4.7 urn and outputs 2.3 W pulsed power with a peak wall-plug efficiency of 19%.

Original language	English (US)
Pages (from-to)	15818-15823
Number of pages	6
Journal	Optics Express
Volume	15
Issue number	24
DOIs	https://doi.org/10.1364/OE.15.015818
State	Published - Nov 26 2007

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics

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title = "Low voltage-defect quantum cascade laser with heterogeneous injector regions",

abstract = "We demonstrate an In0.635Al0.356As/In 0.678Ga0.322As strain compensated quantum cascade laser that employs heterogeneous injector regions for low voltage defect operation. The active core consists of interdigitated undoped and doped injectors followed by nominally identical wavelength optical transitions. The undoped injector regions are designed with reduced voltage defect while the doped injectors are of a more conventional design. The measured average voltage defect is less than 79 meV. At 80 K, a 2.3 mm long, back facet high reflectance coated laser has an emission wavelength of 4.7 urn and outputs 2.3 W pulsed power with a peak wall-plug efficiency of 19%.",

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AU - Hoffman, Anthony J.

AU - Schartner, Stephan

AU - Howard, Scott S.

AU - Franz, Kale J.

AU - Towner, Fred

AU - Gmachl, Claire F.

PY - 2007/11/26

Y1 - 2007/11/26

N2 - We demonstrate an In0.635Al0.356As/In 0.678Ga0.322As strain compensated quantum cascade laser that employs heterogeneous injector regions for low voltage defect operation. The active core consists of interdigitated undoped and doped injectors followed by nominally identical wavelength optical transitions. The undoped injector regions are designed with reduced voltage defect while the doped injectors are of a more conventional design. The measured average voltage defect is less than 79 meV. At 80 K, a 2.3 mm long, back facet high reflectance coated laser has an emission wavelength of 4.7 urn and outputs 2.3 W pulsed power with a peak wall-plug efficiency of 19%.

AB - We demonstrate an In0.635Al0.356As/In 0.678Ga0.322As strain compensated quantum cascade laser that employs heterogeneous injector regions for low voltage defect operation. The active core consists of interdigitated undoped and doped injectors followed by nominally identical wavelength optical transitions. The undoped injector regions are designed with reduced voltage defect while the doped injectors are of a more conventional design. The measured average voltage defect is less than 79 meV. At 80 K, a 2.3 mm long, back facet high reflectance coated laser has an emission wavelength of 4.7 urn and outputs 2.3 W pulsed power with a peak wall-plug efficiency of 19%.

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Low voltage-defect quantum cascade laser with heterogeneous injector regions

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