TY - JOUR
T1 - Low Threshold Voltages Electrochemically Drive Gold Migration in Halide Perovskite Devices
AU - Kerner, Ross A.
AU - Zhao, Lianfeng
AU - Harvey, Steven P.
AU - Berry, Joseph J.
AU - Schwartz, Jeffrey
AU - Rand, Barry P.
N1 - Funding Information:
This work received partial support from ExxonMobil through its membership in the Princeton E-filliates Partnership of the Andlinger Center for Energy and the Environment. The authors acknowledge the use and aid of Princeton’s Imaging and Analysis Center, which is partially supported by the Princeton Center for Complex Materials, a National Science Foundation (NSF)-MRSEC program (DMR-1420541). J.J.B. was initally supported by the ONR (Award #N00014191P0005). S.P.H. was supported by the U.S. Department of Energy (DOE) under Contract No. DE-AC36-08GO28308. NREL experimetal work was also supported by the U.S. Department of Energy’s Office of Energy Efficiency and Renewable Energy (EERE) under the Solar Energy Technologies Office (SETO) project “De-risking Halide Perovskite Solar Cells” program (DE-FOA-0000990). The views expressed in the article do not necessarily represent the views of the DOE or the U.S. Government. The U.S. Government retains and the publisher, by accepting the article for publication, acknowledges that the U.S. Government retains a nonexclusive, paid-up, irrevocable, worldwide license to publish or reproduce the published form of this work, or allow others to do so, for U.S. Government purposes. We thank Professor Andrew Bocarsly for helpful discussions.
Publisher Copyright:
© 2020 American Chemical Society. All rights reserved.
PY - 2020/11/13
Y1 - 2020/11/13
N2 - The constituent ions of halide perovskite materials are mobile in the solid state and known to participate in reduction/oxidation reactions. Yet few parameters related to electrochemical processes occurring within devices have been carefully determined. Here, we characterize such reactions in model MAPbI3perovskite devices, and we quantify threshold voltages for key reactions. Gold is oxidized and mobilized under nitrogen, in the dark, at the MAPbI3/Au interface at 0.8 V. When this interface is buffered with the organic hole transport material (HTM), 2,2′,7,7′-Tetrakis(N,N-di-p-methoxyphenylamino)-9,9′-spirobifluorene, MAPbI3begins to degrade at 1.2 V; degradation liberates ions that subsequently enable Au migration. Thresholds are insensitive to MAPbI3thickness or choice of organic HTM or oxide cathode, which suggests that these reactions are driven electrochemically; the electric field across the device is less important. These results have profound implications for understanding in operando degradation pathways of optoelectronic perovskite devices that are varied in terms of interface structures, active material compositions, and ranges of external stressors.
AB - The constituent ions of halide perovskite materials are mobile in the solid state and known to participate in reduction/oxidation reactions. Yet few parameters related to electrochemical processes occurring within devices have been carefully determined. Here, we characterize such reactions in model MAPbI3perovskite devices, and we quantify threshold voltages for key reactions. Gold is oxidized and mobilized under nitrogen, in the dark, at the MAPbI3/Au interface at 0.8 V. When this interface is buffered with the organic hole transport material (HTM), 2,2′,7,7′-Tetrakis(N,N-di-p-methoxyphenylamino)-9,9′-spirobifluorene, MAPbI3begins to degrade at 1.2 V; degradation liberates ions that subsequently enable Au migration. Thresholds are insensitive to MAPbI3thickness or choice of organic HTM or oxide cathode, which suggests that these reactions are driven electrochemically; the electric field across the device is less important. These results have profound implications for understanding in operando degradation pathways of optoelectronic perovskite devices that are varied in terms of interface structures, active material compositions, and ranges of external stressors.
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U2 - 10.1021/acsenergylett.0c01805
DO - 10.1021/acsenergylett.0c01805
M3 - Article
AN - SCOPUS:85094573243
SN - 2380-8195
VL - 5
SP - 3352
EP - 3356
JO - ACS Energy Letters
JF - ACS Energy Letters
IS - 11
ER -