Low-threshold current-injection single-mode lasing in T-shaped GaAs/AlGaAs quantum wires

Shu Man Liu, Masahiro Yoshita, Makoto Okano, Toshiyuki Ihara, Hirotake Itoh, Hidefumi Akiyama, Loren Pfeiffer, Ken West, Kirk Baldwin

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


A one-dimensional active region consisting of 20-period T-shaped GaAs/AlGaAs quantum wires of 14 x 6nm2 combined with a well-defined current-confinement scheme has been utilized to obtain a low-threshold-current high-efficiency laser. A threshold current as low as 0.27 mA, a single-mode cw output power of 0.13 mW at 1 mA injection current, and a differential quantum efficiency of 12% were achieved at 30 K using a quantum-wire laser with a 500-μm-long Fabry-Perot cavity coatedby high-reflectivity thin metals.

Original languageEnglish (US)
Pages (from-to)L330-L332
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number12-16
StatePublished - Apr 13 2007
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • General Engineering
  • General Physics and Astronomy


  • Cleaved-edge overgrowth
  • Current injection
  • Low threshold
  • Quantum-wire laser
  • Single mode


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