Low temperature thermoelectric properties of Bi 2-xSb xTeSe 2 crystals near the n-p crossover

M. K. Fuccillo, M. E. Charles, Y. S. Hor, Shuang Jia, R. J. Cava

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Seebeck coefficients, electrical resistivities, thermal conductivities and figure of merit ZT of Bi 2-xSb xTeSe 2 crystals (x=0.8, 0.9, 1.0, 1.1, and 1.2) measured along the hexagonal basal plane are presented. The crystals gradually change from n- to p-type with increasing Sb content, with the crossover lying in the region between x=1.0 and 1.1. The crossover is accounted for by a simple (p-n) electron-hole compensation model, as supported by carrier concentrations determined from Hall measurements. ZT was found to be maximized near the crossover on the p-type side, with the high electrical resistance of the Se-rich crystals apparently the limiting factor in the performance. These materials may serve as a basis for future nanostructuring or doping studies.

Original languageEnglish (US)
Pages (from-to)1208-1211
Number of pages4
JournalSolid State Communications
Issue number14
StatePublished - Jul 2012

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry


  • A. Semiconductors
  • B. Doping
  • D. Electronic transport
  • D. Thermoelectric


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