Low temperature thermoelectric properties of Bi 2-xSb xTeSe 2 crystals near the n-p crossover

M. K. Fuccillo; M. E. Charles; Y. S. Hor; Shuang Jia; R. J. Cava

doi:10.1016/j.ssc.2012.04.062

Low temperature thermoelectric properties of Bi _2-xSb _xTeSe ₂ crystals near the n-p crossover

M. K. Fuccillo, M. E. Charles, Y. S. Hor, Shuang Jia, R. J. Cava

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

Seebeck coefficients, electrical resistivities, thermal conductivities and figure of merit ZT of Bi _2-xSb _xTeSe ₂ crystals (x=0.8, 0.9, 1.0, 1.1, and 1.2) measured along the hexagonal basal plane are presented. The crystals gradually change from n- to p-type with increasing Sb content, with the crossover lying in the region between x=1.0 and 1.1. The crossover is accounted for by a simple (p-n) electron-hole compensation model, as supported by carrier concentrations determined from Hall measurements. ZT was found to be maximized near the crossover on the p-type side, with the high electrical resistance of the Se-rich crystals apparently the limiting factor in the performance. These materials may serve as a basis for future nanostructuring or doping studies.

Original language	English (US)
Pages (from-to)	1208-1211
Number of pages	4
Journal	Solid State Communications
Volume	152
Issue number	14
DOIs	https://doi.org/10.1016/j.ssc.2012.04.062
State	Published - Jul 2012

All Science Journal Classification (ASJC) codes

General Chemistry
Condensed Matter Physics
Materials Chemistry

Keywords

A. Semiconductors
B. Doping
D. Electronic transport
D. Thermoelectric

Access to Document

10.1016/j.ssc.2012.04.062

Cite this

@article{010035975d7a46ed8be0400b28ef0e4f,

title = "Low temperature thermoelectric properties of Bi 2-xSb xTeSe 2 crystals near the n-p crossover",

abstract = "Seebeck coefficients, electrical resistivities, thermal conductivities and figure of merit ZT of Bi 2-xSb xTeSe 2 crystals (x=0.8, 0.9, 1.0, 1.1, and 1.2) measured along the hexagonal basal plane are presented. The crystals gradually change from n- to p-type with increasing Sb content, with the crossover lying in the region between x=1.0 and 1.1. The crossover is accounted for by a simple (p-n) electron-hole compensation model, as supported by carrier concentrations determined from Hall measurements. ZT was found to be maximized near the crossover on the p-type side, with the high electrical resistance of the Se-rich crystals apparently the limiting factor in the performance. These materials may serve as a basis for future nanostructuring or doping studies.",

keywords = "A. Semiconductors, B. Doping, D. Electronic transport, D. Thermoelectric",

author = "Fuccillo, {M. K.} and Charles, {M. E.} and Hor, {Y. S.} and Shuang Jia and Cava, {R. J.}",

note = "Funding Information: This work was supported by the US Air Force Office of Scientific Research MURI program in thermoelectrics , grant FA9550-10-1–0533 . MKF would also like to thank Daigorou Hirai for valuable discussions about measurements. ",

year = "2012",

month = jul,

doi = "10.1016/j.ssc.2012.04.062",

language = "English (US)",

volume = "152",

pages = "1208--1211",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Limited",

number = "14",

}

TY - JOUR

T1 - Low temperature thermoelectric properties of Bi 2-xSb xTeSe 2 crystals near the n-p crossover

AU - Fuccillo, M. K.

AU - Charles, M. E.

AU - Hor, Y. S.

AU - Jia, Shuang

AU - Cava, R. J.

N1 - Funding Information: This work was supported by the US Air Force Office of Scientific Research MURI program in thermoelectrics , grant FA9550-10-1–0533 . MKF would also like to thank Daigorou Hirai for valuable discussions about measurements.

PY - 2012/7

Y1 - 2012/7

N2 - Seebeck coefficients, electrical resistivities, thermal conductivities and figure of merit ZT of Bi 2-xSb xTeSe 2 crystals (x=0.8, 0.9, 1.0, 1.1, and 1.2) measured along the hexagonal basal plane are presented. The crystals gradually change from n- to p-type with increasing Sb content, with the crossover lying in the region between x=1.0 and 1.1. The crossover is accounted for by a simple (p-n) electron-hole compensation model, as supported by carrier concentrations determined from Hall measurements. ZT was found to be maximized near the crossover on the p-type side, with the high electrical resistance of the Se-rich crystals apparently the limiting factor in the performance. These materials may serve as a basis for future nanostructuring or doping studies.

AB - Seebeck coefficients, electrical resistivities, thermal conductivities and figure of merit ZT of Bi 2-xSb xTeSe 2 crystals (x=0.8, 0.9, 1.0, 1.1, and 1.2) measured along the hexagonal basal plane are presented. The crystals gradually change from n- to p-type with increasing Sb content, with the crossover lying in the region between x=1.0 and 1.1. The crossover is accounted for by a simple (p-n) electron-hole compensation model, as supported by carrier concentrations determined from Hall measurements. ZT was found to be maximized near the crossover on the p-type side, with the high electrical resistance of the Se-rich crystals apparently the limiting factor in the performance. These materials may serve as a basis for future nanostructuring or doping studies.

KW - A. Semiconductors

KW - B. Doping

KW - D. Electronic transport

KW - D. Thermoelectric

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U2 - 10.1016/j.ssc.2012.04.062

DO - 10.1016/j.ssc.2012.04.062

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VL - 152

SP - 1208

EP - 1211

JO - Solid State Communications

JF - Solid State Communications

IS - 14

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