Low temperature magnetothermoelectric effect and magnetoresistance in Te vapor annealed Bi2Te3

Y. S. Hor, D. Qu, N. P. Ong, R. J. Cava

Research output: Contribution to journalArticle

28 Scopus citations

Abstract

The electrical properties of single crystals of p-type Bi 2Te3 are shown to be tuned by annealing as-grown crystals in elemental Te vapor at temperatures in the range of 400-420 °C. While as-grown nominally stoichiometric Bi2Te3 has p-type conductivity below room temperature, Te vapor annealed Bi2Te 3 shows a cross over from p- to n-type behavior. The temperature dependent resistivity of the Te annealed crystals shows a characteristic broad peak near 100 K. Applied magnetic fields give rise to a large low temperature magnetothermoelectric effect in the Te annealed samples and enhance the low temperature peak in the resistivity. Further, Te annealed Bi2Te 3 shows a large positive magnetoresistance, ∼200% at 2 K, and ∼15% at room temperature. The annealing procedure described can be employed to optimize the properties of Bi2Te3 for study as a topological insulator.

Original languageEnglish (US)
Article number375801
JournalJournal of Physics Condensed Matter
Volume22
Issue number37
DOIs
StatePublished - Aug 31 2010

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

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