Low-temperature magnetoresistance of a disordered metal

T. F. Rosenbaum, R. F. Milligan, G. A. Thomas, P. A. Lee, T. V. Ramakrishnan, R. N. Bhatt, K. DeConde, H. Hess, T. Perry

Research output: Contribution to journalArticle

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Abstract

A contribution to the magnetoresistance is observed at temperatures below 100 mK in bulk metallic Si: P that is unanticipated within theoretical analyses of localization. This contribution is positive, approximately independent of sample orientation, and varying roughly as the square root of the applied field. An analysis of Coulomb interactions including spin splitting is presented which, when combined with localization, describes the magnetoresistance.

Original languageEnglish (US)
Pages (from-to)1758-1761
Number of pages4
JournalPhysical review letters
Volume47
Issue number24
DOIs
StatePublished - 1981

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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