Low-temperature magnetoresistance of a disordered metal

T. F. Rosenbaum, R. F. Milligan, G. A. Thomas, P. A. Lee, T. V. Ramakrishnan, R. N. Bhatt, K. DeConde, H. Hess, T. Perry

Research output: Contribution to journalArticlepeer-review

87 Scopus citations


A contribution to the magnetoresistance is observed at temperatures below 100 mK in bulk metallic Si: P that is unanticipated within theoretical analyses of localization. This contribution is positive, approximately independent of sample orientation, and varying roughly as the square root of the applied field. An analysis of Coulomb interactions including spin splitting is presented which, when combined with localization, describes the magnetoresistance.

Original languageEnglish (US)
Pages (from-to)1758-1761
Number of pages4
JournalPhysical review letters
Issue number24
StatePublished - 1981
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy


Dive into the research topics of 'Low-temperature magnetoresistance of a disordered metal'. Together they form a unique fingerprint.

Cite this