Abstract
We have measured the magnetization of thick films as a function of temperature (T) and magnetic field (H) near the metal-insulator (MI) transition. In the insulating phase the susceptibility x K T with a = 0.8 and both the T- and the //-dependence of X are well described by a hierarchical spin-pairing model. In the metallic phase x shows a similar power-law behavior with a « 0.55, indicative of non-Fermi liquid behavior. We compare these results with similar measurements in doped semiconductors and with existing theories of the disordered insulating and metallic phases. The data suggest a decoupling of transport and magnetic behavior at the MI transition.
Original language | English (US) |
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Pages (from-to) | 927-932 |
Number of pages | 6 |
Journal | EPL |
Volume | 21 |
Issue number | 9 |
DOIs | |
State | Published - Mar 20 1993 |
All Science Journal Classification (ASJC) codes
- General Physics and Astronomy