Low-temperature, in situ tunable, uniaxial stress measurements in semiconductors using a piezoelectric actuator

Mansour Shayegan, K. Karrai, Y. P. Shkolnikov, K. Vakili, E. P. De Poortere, S. Manus

Research output: Contribution to journalArticle

70 Scopus citations

Abstract

A piezoelectric actuator was used for the in situ tunable uniaxial stress measurements at cryogenic temperatures in a two-dimensional electron systems confined to a modulation-doped AlAs quantum well. The energies and the occupation of the conduction-band minima and electronic properties of the electron system were controlled through stress application. The longitudinal and transverse strain were measured against the bias for the actuator at 300, 77 and 4.2 K. The results show that the strain was linear and exhibited little hysteresis with the applied bias.

Original languageEnglish (US)
Pages (from-to)5235-5237
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number25
DOIs
StatePublished - Dec 22 2003

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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