Low temperature electronic transports in the presence of a density gradient

W. Pan, J. S. Xia, H. L. Stormer, D. C. Tsui, C. L. Vicente, E. D. Adams, N. S. Sullivan, L. N. Pfeiffer, K. W. Baldwin, K. W. West

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


In this paper, we review low temperature electronic transport results in high quality two-dimensional electron systems. We discuss the quantization of the diagonal resistance, Rx x, at the edges of several quantum Hall states. Each quantized Rx x value turns out to be close to the difference between the two adjacent Hall plateaus in the off-diagonal resistance, Rx y. Moreover, peaks in Rx x occur at different positions in positive and negative magnetic fields. All three Rx x features can be explained quantitatively by a ∼1% cm electron density gradient. Furthermore, based on this observation, the well known but still enigmatic resistivity rule, relating Rx x to d Rx y / d B, finds a simple interpretation in terms of this gradient. In another sample, at 1.2 K, Rx x we observe a strongly linear magnetic field dependence. Surprisingly, this linear magnetoresistance also originates from the density gradient. Our findings throw an unexpected light on the relationship between the experimentally measured Rx x and the diagonal resistivity ρx x.

Original languageEnglish (US)
Pages (from-to)88-93
Number of pages6
JournalSolid State Communications
Issue number2
StatePublished - Oct 2006
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • General Chemistry
  • Condensed Matter Physics
  • Materials Chemistry


  • D. Density gradient
  • D. Linear magnetoresistance
  • D. Quantum Hall effect
  • D. Resistivity rule


Dive into the research topics of 'Low temperature electronic transports in the presence of a density gradient'. Together they form a unique fingerprint.

Cite this