TY - JOUR
T1 - Low-Temperature Cross-Linking Benzocyclobutene Based Polymer Dielectric for Organic Thin Film Transistors on Plastic Substrates
AU - Hallani, Rawad K.
AU - Moser, Maximilian
AU - Bristow, Helen
AU - Jenart, Maud V.C.
AU - Faber, Hendrik
AU - Neophytou, Marios
AU - Yarali, Emre
AU - Paterson, Alexandra F.
AU - Anthopoulos, Thomas D.
AU - McCulloch, Iain
N1 - Publisher Copyright:
© 2019 American Chemical Society.
PY - 2020/1/3
Y1 - 2020/1/3
N2 - The synthesis of a new benzocyclobutene based polymer, PSBBB, designed as a dielectric material for use in organic thin film transistors was reported. Compared to conventional benzocyclobutene-based materials, the introduction of a butoxide substituent at the 7-position of the benzocyclobutene pendant unit on the polymer allowed PSBBB to be cross-linked at temperatures of 120 °C, thus rendering it compatible with the processing requirements of flexible plastic substrates. The cross-linking behavior of PSBBB was investigated by Fourier transform infrared spectroscopy and differential scanning calorimetry, demonstrating cross-linking of the polymer after curing at 120 °C. Bottom-gate bottom-contact organic thin film transistors were fabricated using PSBBB as dielectric, affording a performance comparable to that of other dielectric polymeric materials.
AB - The synthesis of a new benzocyclobutene based polymer, PSBBB, designed as a dielectric material for use in organic thin film transistors was reported. Compared to conventional benzocyclobutene-based materials, the introduction of a butoxide substituent at the 7-position of the benzocyclobutene pendant unit on the polymer allowed PSBBB to be cross-linked at temperatures of 120 °C, thus rendering it compatible with the processing requirements of flexible plastic substrates. The cross-linking behavior of PSBBB was investigated by Fourier transform infrared spectroscopy and differential scanning calorimetry, demonstrating cross-linking of the polymer after curing at 120 °C. Bottom-gate bottom-contact organic thin film transistors were fabricated using PSBBB as dielectric, affording a performance comparable to that of other dielectric polymeric materials.
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U2 - 10.1021/acs.joc.9b02981
DO - 10.1021/acs.joc.9b02981
M3 - Article
C2 - 31779306
AN - SCOPUS:85076762407
SN - 0022-3263
VL - 85
SP - 277
EP - 283
JO - Journal of Organic Chemistry
JF - Journal of Organic Chemistry
IS - 1
ER -