Low temperature conductivity of doped semiconductors: Mass anisotropy and intervalley effects

R. N. Bhatt; P. A. Lee

doi:10.1016/0038-1098(83)91011-6

Low temperature conductivity of doped semiconductors: Mass anisotropy and intervalley effects

R. N. Bhatt, P. A. Lee

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Abstract

The theory of the low temperature correction to the conductivity of weakly disordered three-dimensional systems due to electron-electron interaction effects is extended to the case of many valley systems (e.g., n-doped Si or Ge). A strong dependence due to both mass anisotropy and intervalley scattering is found, which is capable of explaining the large discrepancy between the experiment and existing theoretical estimates.

Original language	English (US)
Pages (from-to)	755-759
Number of pages	5
Journal	Solid State Communications
Volume	48
Issue number	9
DOIs	https://doi.org/10.1016/0038-1098(83)91011-6
State	Published - Dec 1983
Externally published	Yes

All Science Journal Classification (ASJC) codes

General Chemistry
Condensed Matter Physics
Materials Chemistry

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10.1016/0038-1098(83)91011-6

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title = "Low temperature conductivity of doped semiconductors: Mass anisotropy and intervalley effects",

abstract = "The theory of the low temperature correction to the conductivity of weakly disordered three-dimensional systems due to electron-electron interaction effects is extended to the case of many valley systems (e.g., n-doped Si or Ge). A strong dependence due to both mass anisotropy and intervalley scattering is found, which is capable of explaining the large discrepancy between the experiment and existing theoretical estimates.",

author = "Bhatt, \{R. N.\} and Lee, \{P. A.\}",

year = "1983",

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journal = "Solid State Communications",

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T1 - Low temperature conductivity of doped semiconductors

T2 - Mass anisotropy and intervalley effects

AU - Bhatt, R. N.

AU - Lee, P. A.

PY - 1983/12

Y1 - 1983/12

N2 - The theory of the low temperature correction to the conductivity of weakly disordered three-dimensional systems due to electron-electron interaction effects is extended to the case of many valley systems (e.g., n-doped Si or Ge). A strong dependence due to both mass anisotropy and intervalley scattering is found, which is capable of explaining the large discrepancy between the experiment and existing theoretical estimates.

AB - The theory of the low temperature correction to the conductivity of weakly disordered three-dimensional systems due to electron-electron interaction effects is extended to the case of many valley systems (e.g., n-doped Si or Ge). A strong dependence due to both mass anisotropy and intervalley scattering is found, which is capable of explaining the large discrepancy between the experiment and existing theoretical estimates.

UR - https://www.scopus.com/pages/publications/0020881987

UR - https://www.scopus.com/inward/citedby.url?scp=0020881987&partnerID=8YFLogxK

U2 - 10.1016/0038-1098(83)91011-6

DO - 10.1016/0038-1098(83)91011-6

M3 - Article

AN - SCOPUS:0020881987

SN - 0038-1098

VL - 48

SP - 755

EP - 759

JO - Solid State Communications

JF - Solid State Communications

IS - 9

ER -

Low temperature conductivity of doped semiconductors: Mass anisotropy and intervalley effects

Abstract

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