The theory of the low temperature correction to the conductivity of weakly disordered three-dimensional systems due to electron-electron interaction effects is extended to the case of many valley systems (e.g., n-doped Si or Ge). A strong dependence due to both mass anisotropy and intervalley scattering is found, which is capable of explaining the large discrepancy between the experiment and existing theoretical estimates.
|Original language||English (US)|
|Number of pages||5|
|Journal||Solid State Communications|
|State||Published - Dec 1983|
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Materials Chemistry