Low temperature conductivity of doped semiconductors: Mass anisotropy and intervalley effects

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Abstract

The theory of the low temperature correction to the conductivity of weakly disordered three-dimensional systems due to electron-electron interaction effects is extended to the case of many valley systems (e.g., n-doped Si or Ge). A strong dependence due to both mass anisotropy and intervalley scattering is found, which is capable of explaining the large discrepancy between the experiment and existing theoretical estimates.

Original languageEnglish (US)
Pages (from-to)755-759
Number of pages5
JournalSolid State Communications
Volume48
Issue number9
DOIs
StatePublished - Jan 1 1983
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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