Low temperature chemical vapor deposition growth of β-SiC on (100) Si using methylsilane and device characteristics

Engineering

• Low-Temperature 100%
• Chemical Vapor Deposition 100%
• Vapor Deposition 100%
• Heterojunction bipolar transistors 100%
• Schottky Barrier 50%
• Si Substrate 50%
• Transistor 50%
• Bipolar Transistor 25%
• Temperature Coefficient 25%
• Surface Morphology 25%
• Current Collector 25%
• Growth Temperature 25%
• Field Distribution 25%
• Breakdown Voltage 25%
• Recombination Centre 25%
• Positive Temperature Coefficient 25%
• Base Structure 25%
• Electric Field 25%
• Carbonization 25%

Material Science

• Bipolar Transistor 100%
• Chemical Vapor Deposition 100%
• Heterojunction 80%
• Transistor 40%
• Schottky Barrier 40%
• Raman Spectroscopy 20%
• Thermal Chemical Vapor Deposition 20%
• Surface Morphology 20%
• Crystalline Material 20%

Keyphrases

• Interface Defects 50%