Low-temperature adsorption of oxygen on Si(111)

C. Silvestre, J. Hladky, M. Shayegan

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16 Scopus citations


High resolution electron energy loss spectra and work function results are presented for the Si (111) surface held at 20 K during exposure to 02and subsequently annealed to 300 K. The data are consistent with the presence at 20 K of stable chemisorbed monatomic bridging, diatomic like nonbridging, physisorbed molecular, and metastable chemisorbed peroxy/superoxy oxygen on this surface. Upon warming the oxygen covered surface, the physisorbed oxygen evaporates at ≈ 35 K, the metastable superoxy oxygen converts to the peroxy oxygen above ≈ 60 K, the diatomic like nonbridging oxygen converts to the stable monatomic bridging oxygen above ≈ 60 K, and the metastable peroxy oxygen begins to convert to the stable monatomic bridging oxygen at ≈150 K.

Original languageEnglish (US)
Pages (from-to)2743-2746
Number of pages4
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Issue number3
StatePublished - May 1990

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


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