Low temperature (≥ 400 °C) silicon pyrometry at 1.1 μm with emissivity correction

J. C. Sturm; A. Reddy

doi:10.1557/proc-387-137

Low temperature (≥ 400 °C) silicon pyrometry at 1.1 μm with emissivity correction

J. C. Sturm, A. Reddy

Research output: Contribution to journal › Conference article › peer-review

3 Scopus citations

Abstract

In this work we have examined the experimental low-temperature limits of 1.1μm pyrometry for the measurement of the temperature of silicon wafers and aluminum-coated silicon wafers at temperatures under 700 °C in RTP chambers. In-situ emissivity correction in the same range has also been demonstrated with a single detector for radiation and reflection measurements. Temperatures as low as 450 °C have been measured on metallized surfaces with an accuracy of better than 10 °C without any a priori knowledge of the wafer emissivity.

Original language	English (US)
Pages (from-to)	137-142
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	387
DOIs	https://doi.org/10.1557/proc-387-137
State	Published - 1995
Event	Proceedings of the 1995 MRS Spring Meeting - San Francisco, CA, USA Duration: Apr 17 1995 → Apr 21 1995

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "Low temperature (≥ 400 °C) silicon pyrometry at 1.1 μm with emissivity correction",

abstract = "In this work we have examined the experimental low-temperature limits of 1.1μm pyrometry for the measurement of the temperature of silicon wafers and aluminum-coated silicon wafers at temperatures under 700 °C in RTP chambers. In-situ emissivity correction in the same range has also been demonstrated with a single detector for radiation and reflection measurements. Temperatures as low as 450 °C have been measured on metallized surfaces with an accuracy of better than 10 °C without any a priori knowledge of the wafer emissivity.",

author = "Sturm, {J. C.} and A. Reddy",

year = "1995",

doi = "10.1557/proc-387-137",

language = "English (US)",

volume = "387",

pages = "137--142",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1995 MRS Spring Meeting ; Conference date: 17-04-1995 Through 21-04-1995",

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TY - JOUR

T1 - Low temperature (≥ 400 °C) silicon pyrometry at 1.1 μm with emissivity correction

AU - Sturm, J. C.

AU - Reddy, A.

PY - 1995

Y1 - 1995

N2 - In this work we have examined the experimental low-temperature limits of 1.1μm pyrometry for the measurement of the temperature of silicon wafers and aluminum-coated silicon wafers at temperatures under 700 °C in RTP chambers. In-situ emissivity correction in the same range has also been demonstrated with a single detector for radiation and reflection measurements. Temperatures as low as 450 °C have been measured on metallized surfaces with an accuracy of better than 10 °C without any a priori knowledge of the wafer emissivity.

AB - In this work we have examined the experimental low-temperature limits of 1.1μm pyrometry for the measurement of the temperature of silicon wafers and aluminum-coated silicon wafers at temperatures under 700 °C in RTP chambers. In-situ emissivity correction in the same range has also been demonstrated with a single detector for radiation and reflection measurements. Temperatures as low as 450 °C have been measured on metallized surfaces with an accuracy of better than 10 °C without any a priori knowledge of the wafer emissivity.

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U2 - 10.1557/proc-387-137

DO - 10.1557/proc-387-137

M3 - Conference article

AN - SCOPUS:0029477589

SN - 0272-9172

VL - 387

SP - 137

EP - 142

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1995 MRS Spring Meeting

Y2 - 17 April 1995 through 21 April 1995

ER -

Low temperature (≥ 400 °C) silicon pyrometry at 1.1 μm with emissivity correction

Abstract

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