Low temperature (≥ 400 °C) silicon pyrometry at 1.1 μm with emissivity correction

J. C. Sturm, A. Reddy

Research output: Contribution to journalConference articlepeer-review

2 Scopus citations

Abstract

In this work we have examined the experimental low-temperature limits of 1.1μm pyrometry for the measurement of the temperature of silicon wafers and aluminum-coated silicon wafers at temperatures under 700 °C in RTP chambers. In-situ emissivity correction in the same range has also been demonstrated with a single detector for radiation and reflection measurements. Temperatures as low as 450 °C have been measured on metallized surfaces with an accuracy of better than 10 °C without any a priori knowledge of the wafer emissivity.

Original languageEnglish (US)
Pages (from-to)137-142
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume387
DOIs
StatePublished - 1995
EventProceedings of the 1995 MRS Spring Meeting - San Francisco, CA, USA
Duration: Apr 17 1995Apr 21 1995

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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