Low-Loss Silicon Carbide Optical Waveguides for Silicon-Based Optoelectronic Devices

Y. M. Liu, P. R. Prucnal

Research output: Contribution to journalArticlepeer-review

32 Scopus citations


Planar silicon carbide waveguides are proposed to be fabricated on a silicon substrate with an buried Si02 isolation layer. For a broad wavelength range, the waveguide structure exhibits low loss for fundamental modes and high loss for higher-order modes, which is extremely useful for waveguiding either over the communication wavelength range 1.3-1.6 μm or flor light emission from porous silicon at 0.7 μm. Singlemode large cross-section rib waveguides based on the proposed planar structure are also analyzed. Such waveguides have potential application for silicon-based optoelectronic devices.

Original languageEnglish (US)
Pages (from-to)704-707
Number of pages4
JournalIEEE Photonics Technology Letters
Issue number6
StatePublished - Jun 1993

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering


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