Low-frequency dielectric response of the charge-density wave in (TaSe4)2I

R. J. Cava; P. Littlewood; R. M. Fleming; R. G. Dunn; E. A. Rietman

doi:10.1103/PhysRevB.33.2439

Low-frequency dielectric response of the charge-density wave in (TaSe4)2I

R. J. Cava, P. Littlewood, R. M. Fleming, R. G. Dunn, E. A. Rietman

Research output: Contribution to journal › Article › peer-review

47 Scopus citations

Abstract

We have found the charge-density wave (CDW) in (TaSe4)2I to display a low-frequency dielectric relaxation characterized by a distribution of relaxation times. The mean relaxation times vary between approximately 10-4 and 10-8 sec in the temperature range of 90 to 180 K, and display an Arrhenius temperature dependence with the same activation energy (1436 K) as the normal resistivity. This is the only material thus far studied where such a straightforward connection between CDW relaxation and the band gap has been observed.

Original language	English (US)
Pages (from-to)	2439-2443
Number of pages	5
Journal	Physical Review B
Volume	33
Issue number	4
DOIs	https://doi.org/10.1103/PhysRevB.33.2439
State	Published - 1986
Externally published	Yes

All Science Journal Classification (ASJC) codes

Condensed Matter Physics

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10.1103/PhysRevB.33.2439

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abstract = "We have found the charge-density wave (CDW) in (TaSe4)2I to display a low-frequency dielectric relaxation characterized by a distribution of relaxation times. The mean relaxation times vary between approximately 10-4 and 10-8 sec in the temperature range of 90 to 180 K, and display an Arrhenius temperature dependence with the same activation energy (1436 K) as the normal resistivity. This is the only material thus far studied where such a straightforward connection between CDW relaxation and the band gap has been observed.",

author = "Cava, {R. J.} and P. Littlewood and Fleming, {R. M.} and Dunn, {R. G.} and Rietman, {E. A.}",

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T1 - Low-frequency dielectric response of the charge-density wave in (TaSe4)2I

AU - Cava, R. J.

AU - Littlewood, P.

AU - Fleming, R. M.

AU - Dunn, R. G.

AU - Rietman, E. A.

PY - 1986

Y1 - 1986

N2 - We have found the charge-density wave (CDW) in (TaSe4)2I to display a low-frequency dielectric relaxation characterized by a distribution of relaxation times. The mean relaxation times vary between approximately 10-4 and 10-8 sec in the temperature range of 90 to 180 K, and display an Arrhenius temperature dependence with the same activation energy (1436 K) as the normal resistivity. This is the only material thus far studied where such a straightforward connection between CDW relaxation and the band gap has been observed.

AB - We have found the charge-density wave (CDW) in (TaSe4)2I to display a low-frequency dielectric relaxation characterized by a distribution of relaxation times. The mean relaxation times vary between approximately 10-4 and 10-8 sec in the temperature range of 90 to 180 K, and display an Arrhenius temperature dependence with the same activation energy (1436 K) as the normal resistivity. This is the only material thus far studied where such a straightforward connection between CDW relaxation and the band gap has been observed.

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DO - 10.1103/PhysRevB.33.2439

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JO - Physical Review B

JF - Physical Review B

IS - 4

ER -

Low-frequency dielectric response of the charge-density wave in (TaSe4)2I

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